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Pavlidis, Dimitrios
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Research Professor
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College of Engineering and Computing
,
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Scholarly & Creative Works
Research
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Scholarly & Creative Works
selected scholarly works & creative activities
Article
2024
Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System
.
JOURNAL OF ELECTRONIC MATERIALS
. 53:1414-1424.
Full Text via DOI:
10.1007/s11664-023-10894-w
Web of Science:
001143729000002
2021
Microstrip Array Ring FETs with 2D p-Ga
2
O
3
Channels Grown by MOCVD
Full Text via DOI:
10.3390/photonics8120578
Web of Science:
000738079500001
2021
Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 68:3034-3039.
Full Text via DOI:
10.1109/TED.2021.3076031
Web of Science:
000652799800069
2021
(Invited) III-Nitrides for Vacuum Nanoelectronics
Full Text via DOI:
10.1149/ma2021-01331068mtgabs
2018
Optically adjustable valley Hall current in single-layer transition metal dichalcogenides
.
JOURNAL OF APPLIED PHYSICS
. 123.
Full Text via DOI:
10.1063/1.5004442
2016
A simple three branch optical power splitter design based on iii-nitride semiconductor for optical telecommunication
Full Text via DOI:
10.14716/ijtech.v7i4.3172
2014
Panel sessions
.
IEEE MICROWAVE MAGAZINE
. 15:52-55.
Full Text via DOI:
10.1109/MMM.2014.2302100
2013
Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interface
.
OPTICS LETTERS
. 38:2425-2427.
Full Text via DOI:
10.1364/OL.38.002425
2012
Magnetic and luminescent properties of manganese-doped ZnSe crystals
.
PHYSICA B
. 407:3802-3807.
Full Text via DOI:
10.1016/j.physb.2012.05.064
2012
Gallium-nitride-based plasmonic multilayer operating at 1.55 μm
.
OPTICS LETTERS
. 37:3039-3041.
Full Text via DOI:
10.1364/OL.37.003039
2012
Photoluminescence study of ZnO nanostructures grown on silicon by MOCVD
.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
. 177:594-599.
Full Text via DOI:
10.1016/j.mseb.2012.03.008
2012
Design and maskless fabrication of ultrathin suspended membranes of GaN
.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
. 6:148-150.
Full Text via DOI:
10.1002/pssr.201206020
2012
Inside Back Cover: Design and maskless fabrication of ultrathin suspended membranes of GaN (Phys. Status Solidi RRL 4/2012)
.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
. 6.
Full Text via DOI:
10.1002/pssr.201290008
2012
Field emission from ZnO whiskers under intervalley electron redistribution
.
APPLIED SURFACE SCIENCE
. 258:4990-4993.
Full Text via DOI:
10.1016/j.apsusc.2012.01.153
2012
Vertically aligned multiwalled carbon nanotubes for pressure, tactile and vibration sensing
.
NANOTECHNOLOGY
. 23.
Full Text via DOI:
10.1088/0957-4484/23/8/085501
2012
GaN surface electron field emission efficiency enhancement by low-energy photon illumination
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 30.
Full Text via DOI:
10.1116/1.3692253
2012
Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 30.
Full Text via DOI:
10.1116/1.4732117
2011
Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy
.
APPLIED PHYSICS LETTERS
. 98.
Full Text via DOI:
10.1063/1.3582055
2011
In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring
.
JOURNAL OF ELECTRONIC MATERIALS
. 40:453-458.
Full Text via DOI:
10.1007/s11664-011-1515-2
2011
Determination of satellite valley position in GaN emitter from photoexcited field emission investigations
.
JOURNAL OF APPLIED PHYSICS
. 109.
Full Text via DOI:
10.1063/1.3533770
2011
Pronounced field emission from vertically aligned carbon nanotube blocks and bundles
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 29.
Full Text via DOI:
10.1116/1.3532804
2010
The impact of high energy ion irradiation upon CO gas sensitivity of nanostructured GaN epilayers
Full Text via DOI:
10.3103/S1068375510060013
2010
Morphology, luminescence, and electrical resistance response to H
2
and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte
.
APPLIED SURFACE SCIENCE
. 257:827-831.
Full Text via DOI:
10.1016/j.apsusc.2010.07.074
2010
Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes
.
APPLIED SURFACE SCIENCE
. 257:388-392.
Full Text via DOI:
10.1016/j.apsusc.2010.06.089
2010
Synthetic-eddy method for urban atmospheric flow modelling
.
BOUNDARY-LAYER METEOROLOGY
. 136:285-299.
Full Text via DOI:
10.1007/s10546-010-9508-x
2010
Patterned growth of ultra long carbon nanotubes. Properties and systematic investigation into their growth process
.
JOURNAL OF MATERIALS CHEMISTRY
. 20:1717-1721.
Full Text via DOI:
10.1039/b919579c
2010
A novel method to form conducting channels in SiO
x
(Si) films for field emission application
.
JOURNAL OF APPLIED PHYSICS
. 107.
Full Text via DOI:
10.1063/1.3273394
2010
Flexible field emitter arrays with adjustable carbon nanotube distances and bundle generation
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 28:268-272.
Full Text via DOI:
10.1116/1.3298889
2010
Thermal stress and strain in a GaN epitaxial layer grown on a sapphire substrate by the MOCVD method
2009
Electron field emission from wide bandgap semiconductors under intervalley carrier redistribution
.
JOURNAL OF APPLIED PHYSICS
. 106.
Full Text via DOI:
10.1063/1.3259384
2009
Impact of in situ SiN
x
layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 27:2079-2083.
Full Text via DOI:
10.1116/1.3186615
2009
A self-supporting monolith of highly aligned carbon nanotubes as device structure for sensor applications
.
CHEMICAL COMMUNICATIONS
. 3205-3207.
Full Text via DOI:
10.1039/b900854c
2008
Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si
3
N
4
.
ELECTRONICS LETTERS
. 44:1428-1429.
Full Text via DOI:
10.1049/el:20081998
2008
Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy
.
JOURNAL OF APPLIED PHYSICS
. 103.
Full Text via DOI:
10.1063/1.2937257
2008
First observation of bias oscillations in GaN Gunn diodes on GaN substrate
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 55:1563-1567.
Full Text via DOI:
10.1109/TED.2008.921253
2008
Power characteristics of AlN/GaN MISFETs on sapphire substrate
.
ELECTRONICS LETTERS
. 44:244-245.
Full Text via DOI:
10.1049/el:20083261
2008
AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate
Full Text via DOI:
10.1093/ietele/e91-c.7.994
2008
Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz measurements
Full Text via DOI:
10.1093/ietele/e91-c.7.1058
2007
Measured negative differential resistivity for GaN Gunn diodes on GaN substrate
.
ELECTRONICS LETTERS
. 43:480-481.
Full Text via DOI:
10.1049/el:20070658
2006
Technology aspects of GaN-based diodes for high-field operation
.
SUPERLATTICES AND MICROSTRUCTURES
. 40:363-368.
Full Text via DOI:
10.1016/j.spmi.2006.07.026
2006
Formation of conducting nanochannels in diamond-like carbon films
Full Text via DOI:
10.1088/0268-1242/21/9/018
2006
Low-frequency noise-based degradation prediction of Al
x
Ga
1-x
N/GaN MODFETs
Full Text via DOI:
10.1109/TDMR.2006.882214
2006
Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications
.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
. 24:1556-1558.
Full Text via DOI:
10.1116/1.2190677
2006
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET
.
SOLID-STATE ELECTRONICS
. 50:282-286.
Full Text via DOI:
10.1016/j.sse.2005.12.006
2006
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P
dc
of 7.2 GHz/mW
.
ELECTRONICS LETTERS
. 42:25-26.
Full Text via DOI:
10.1049/el:20062800
2005
High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
.
JOURNAL OF CRYSTAL GROWTH
. 284:297-305.
Full Text via DOI:
10.1016/j.jcrysgro.2005.06.022
2005
Effects of RF and DC stress on AlGaN/GaN MODFETs: A low-frequency noise-based investigation
Full Text via DOI:
10.1109/TDMR.2005.853515
2005
Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al
x
Ga
1-x
N/GaN MODFETs
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 52:1933-1939.
Full Text via DOI:
10.1109/TED.2005.852543
2005
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier
.
ELECTRONICS LETTERS
. 41:909-911.
Full Text via DOI:
10.1049/el:20051461
2005
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects
.
SOLID-STATE ELECTRONICS
. 49:1352-1360.
Full Text via DOI:
10.1016/j.sse.2005.05.009
2005
Gunn effect in field-emission phenomena
.
JOURNAL OF APPLIED PHYSICS
. 97.
Full Text via DOI:
10.1063/1.1847724
2004
Short-period intrinsic stark GaN/AlGaN superlattice as a Bloch oscillator
.
APPLIED PHYSICS LETTERS
. 85:600-602.
Full Text via DOI:
10.1063/1.1773913
2004
Quantum-size resonance tunneling in the field emission phenomenon
.
JOURNAL OF APPLIED PHYSICS
. 96:867-877.
Full Text via DOI:
10.1063/1.1760234
2004
Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE
Full Text via DOI:
10.1557/proc-831-e11.11
2004
Yellow luminescence centers of GaN
.
JAPANESE JOURNAL OF APPLIED PHYSICS
. 43:2471-2472.
Full Text via DOI:
10.1143/JJAP.43.2471
2003
Field emission from quantum size GaN structures
.
APPLIED SURFACE SCIENCE
. 220:46-50.
Full Text via DOI:
10.1016/S0169-4332(03)00750-5
2003
Optical characterization of AlN/GaN heterostructures
.
JOURNAL OF APPLIED PHYSICS
. 94:4813-4818.
Full Text via DOI:
10.1063/1.1609048
2003
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation
.
JOURNAL OF APPLIED PHYSICS
. 94:3875-3882.
Full Text via DOI:
10.1063/1.1604950
2003
A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 50:1974-1982.
Full Text via DOI:
10.1109/TED.2003.815367
2003
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching
.
APPLIED PHYSICS LETTERS
. 83:1551-1553.
Full Text via DOI:
10.1063/1.1605231
2003
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures
Full Text via DOI:
10.1088/0268-1242/18/2/101
2003
Electromagnetic Analysis of Plane Wave Illumination Effects Onto Passive and Active Circuit Topologies
.
IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS
. 2:230-233.
Full Text via DOI:
10.1109/LAWP.2003.819691
Web of Science:
000208265800064
2003
Free excitons in strained MOCVD-grown GaN layers
Full Text via DOI:
10.1557/s1092578300000442
2002
Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 35:2435.
Full Text via DOI:
10.1109/16.8848
2002
Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors
Full Text via DOI:
10.1088/0268-1242/17/6/301
2002
Comparison of DC high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 49:725-732.
Full Text via DOI:
10.1109/16.998577
2002
First demonstration of monolithic InP-based HBT amplifier with PNP active load
.
IEEE ELECTRON DEVICE LETTERS
. 23:114-117.
Full Text via DOI:
10.1109/55.988809
2002
A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT
.
SOLID-STATE ELECTRONICS
. 46:249-253.
Full Text via DOI:
10.1016/S0038-1101(01)00293-3
2002
Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures
.
JOURNAL OF ELECTRONIC MATERIALS
. 31:395-401.
Full Text via DOI:
10.1007/s11664-002-0090-y
2001
Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 48:1297-1303.
Full Text via DOI:
10.1109/16.930642
2001
Noise characteristics of GaN-based IMPATTs
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 48:1473-1475.
Full Text via DOI:
10.1109/16.930669
2001
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
.
IEEE ELECTRON DEVICE LETTERS
. 22:197-199.
Full Text via DOI:
10.1109/55.919227
2001
DC and high-frequency characteristics of GaN-based IMPATTs
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 48:820-822.
Full Text via DOI:
10.1109/16.915735
2001
Fröhlich modes in GaN columnar nanostructures
.
PHYSICAL REVIEW B
. 64.
Full Text via DOI:
10.1103/PhysRevB.64.233317
2001
GaN-based gunn diodes: Their frequency and power performance and experimental considerations
2001
Investigation of gallium nitride T-ray transmission characteristics
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
. 4591:210-220.
Full Text via DOI:
10.1117/12.449150
2000
GaN Gunn diodes for THz signal generation
2000
Characterization of carbon induced lattice contraction of highly carbon doped InGaAs
2000
High power performance using InAlAs/InGaAs single heterojunction bipolar transistors
2000
Hole impact ionization coefficient in (100)-oriented In
0.53
Ga
0.47
As based on PNP InAlAs/InGaAs HBT's
2000
Design optimization and characterization of high-gain galnp/gaas hbt distributed amplifiers for high-bit-rate telecommunication
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 48:1030-1037.
Full Text via DOI:
10.1109/22.904741
2000
Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs powerHBTs
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 47:677-686.
Full Text via DOI:
10.1109/16.830979
2000
Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology
.
SOLID-STATE ELECTRONICS
. 44:2059-2067.
Full Text via DOI:
10.1016/S0038-1101(00)00074-5
2000
Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics
.
SOLID-STATE ELECTRONICS
. 44:1847-1852.
Full Text via DOI:
10.1016/S0038-1101(00)00030-7
2000
Power performance and scalability of AlGaN/GaN power MODFETs
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 48:1694-1700.
Full Text via DOI:
10.1109/22.873897
2000
Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
.
JOURNAL OF APPLIED PHYSICS
. 88:1983-1986.
Full Text via DOI:
10.1063/1.1303722
2000
Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 48:1038-1044.
Full Text via DOI:
10.1109/22.904742
2000
Large-signal microwave performance of GaN-based NDR diode oscillators
.
SOLID-STATE ELECTRONICS
. 44:941-947.
Full Text via DOI:
10.1016/S0038-1101(00)00011-3
2000
Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs
.
SOLID-STATE ELECTRONICS
. 44:739-746.
Full Text via DOI:
10.1016/S0038-1101(99)00292-0
2000
Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference
.
APPLIED PHYSICS LETTERS
. 76:810-812.
Full Text via DOI:
10.1063/1.125592
2000
DC and high-frequency performance of AlGaN/GaN heterojunction bipolar transistors
.
SOLID-STATE ELECTRONICS
. 44:245-252.
Full Text via DOI:
10.1016/S0038-1101(99)00230-0
2000
Microwave potential of GaN-based Gunn devices
.
ELECTRONICS LETTERS
. 36:176-178.
Full Text via DOI:
10.1049/el:20000200
2000
A nonfundamental theory of low-frequency noise in semiconductor devices
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 47:2009-2017.
Full Text via DOI:
10.1109/16.877159
2000
InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
Full Text via DOI:
10.1109/ICIPRM.2000.850302
2000
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
Full Text via DOI:
10.1557/PROC-595-F99W11.52
1999
Spontaneous polarization and piezoelectric field in nitride semiconductor heterostructures
.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
. 34.
1999
Low interface state density AlN/GaN MISFETs
.
ELECTRONICS LETTERS
. 35:2145-2146.
Full Text via DOI:
10.1049/el:19991407
1999
Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications
.
SOLID-STATE ELECTRONICS
. 43:1429-1436.
Full Text via DOI:
10.1016/S0038-1101(99)00085-4
1999
Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 46:1302-1311.
Full Text via DOI:
10.1109/16.772468
1999
High switching rate capability of mm-wave InGaAs PIN diodes
1999
InP-based complementary HBT amplifiers for use in communication systems
.
SOLID-STATE ELECTRONICS
. 43:1507-1512.
Full Text via DOI:
10.1016/S0038-1101(99)00096-9
1999
Low-power consumption InGaAs PIN diode switches for V-band applications
.
JAPANESE JOURNAL OF APPLIED PHYSICS
. 38:1208-1210.
Full Text via DOI:
10.1143/jjap.38.1208
1999
Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs
1999
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
.
JAPANESE JOURNAL OF APPLIED PHYSICS
. 38:992-995.
Full Text via DOI:
10.1143/jjap.38.992
1999
Power performance of InP-based single and double heterojunction bipolar transistors
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 47:1449-1456.
Full Text via DOI:
10.1109/22.780393
1999
Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases
1999
Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 47:1439-1448.
Full Text via DOI:
10.1109/22.780392
1998
InGaAs-schottky contacts made by in situ plated and evaporated pt-an analysis based on DC and noise characteristics
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 45:349-360.
Full Text via DOI:
10.1109/16.658666
1998
The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
.
APPLIED PHYSICS LETTERS
. 72:338-340.
Full Text via DOI:
10.1063/1.120729
1998
Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces
.
JOURNAL OF APPLIED PHYSICS
. 84:5291-5295.
Full Text via DOI:
10.1063/1.368816
1998
Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors
.
JOURNAL OF ELECTRONIC MATERIALS
. 27:442-445.
Full Text via DOI:
10.1007/s11664-998-0175-3
1998
Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition
.
JOURNAL OF APPLIED PHYSICS
. 83:3829-3834.
Full Text via DOI:
10.1063/1.366613
1998
Material Properties of GaN in the Context of Electron Devices
Full Text via DOI:
10.1557/proc-537-g1.2
1997
Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates
.
APPLIED PHYSICS LETTERS
. 71:3880-3882.
Full Text via DOI:
10.1063/1.120532
1997
Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 45:534-542.
Full Text via DOI:
10.1109/22.566634
1997
DC to high-frequency hbt-model parameter evaluation using impedance block conditioned optimization
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
. 45:886-897.
Full Text via DOI:
10.1109/22.588596
1997
MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics phil marsh
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 44:1066-1075.
Full Text via DOI:
10.1109/16.595933
1997
InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 44:1052-1059.
Full Text via DOI:
10.1109/16.595931
1997
Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
.
JOURNAL OF ELECTRONIC MATERIALS
. 26:1-6.
Full Text via DOI:
10.1007/s11664-997-0123-7
1997
InP-based millimeter-wave PIN diodes for switching and phase-shifting applications
.
SOLID-STATE ELECTRONICS
. 41:1635-1639.
Full Text via DOI:
10.1016/S0038-1101(97)00170-6
1997
Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN
.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
. 44:414-418.
Full Text via DOI:
10.1016/s0921-5107(96)01791-6
1996
Delay time analysis of submicron InP-based HEMT's
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 43:228-237.
Full Text via DOI:
10.1109/16.481722
1996
Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 43:2053-2061.
Full Text via DOI:
10.1109/16.544374
1996
Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 43:2046-2052.
Full Text via DOI:
10.1109/16.544373
1996
Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors
.
APPLIED PHYSICS LETTERS
. 69:3039-3041.
Full Text via DOI:
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First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator
. 153-156.
Full Text via DOI:
10.1109/EMICC.2006.282774
2006
Improvement of CO sensitivity in GaN-based gas sensors
. 1047-1051.
Full Text via DOI:
10.1093/ietele/e89-c.7.1047
2006
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications
. 1037-1041.
Full Text via DOI:
10.1093/ietele/e89-c.7.1037
2006
Technology of wide-bandgap diode structures for highfrequency operation
. 85-92.
Full Text via DOI:
10.1109/SMICND.2006.283938
2005
A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends
. 225-228.
2005
AlGaN/GaN High Electron Mobility Transistor (HEMT) reliability
. 265-268.
2005
First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs
. 101-103.
Full Text via DOI:
10.1109/MWSYM.2005.1516531
2005
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range
. 141-144.
2005
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE
. 641-646.
2004
First power demonstration of InP/GaAsSb/InP double HBTS
. 757-760.
2004
Recent advances in III-V nitride electronic devices
. 795-798.
2004
Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band
. 1657-1659.
2004
Proceedings of SPIE - The International Society for Optical Engineering: Introduction
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
.
2003
First high-frequency and power demonstration of InGaAlAs/GaAsSb/InP double HBTs
. 149-152.
2003
Peculiarities of the electron field emission from quantum-size structures
.
APPLIED SURFACE SCIENCE
. 160-168.
Full Text via DOI:
10.1016/S0169-4332(03)00283-6
2003
A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
. 2027-2031.
2003
Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs
. 119-122.
Full Text via DOI:
10.1109/gaas.2003.1252377
2003
First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
. 2010-2014.
2003
HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN
. 253-262.
Full Text via DOI:
10.1142/9789812796912_0020
2003
Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs
. 78-81.
Full Text via DOI:
10.1109/gaas.2003.1252366
2002
Characterization and Analysis of Gate and Drain Low-frequency Noise in AlGaN/GaN HEMTS
. 453-460.
2002
Fast and ultrafast processes in AlGaN/GaN channels
.
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
. 826-829.
Full Text via DOI:
10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4
2002
Hot-phonon limited electron energy relaxation in AlN/GaN
. 459-468.
Full Text via DOI:
10.1142/S0129156402001381
2002
Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures
.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
. 336-340.
Full Text via DOI:
10.1016/S0921-5107(01)01045-5
2002
DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor
.
JAPANESE JOURNAL OF APPLIED PHYSICS
. 1143-1149.
Full Text via DOI:
10.1143/jjap.41.1143
2002
III-V Nitride electronics
. 443-446.
2002
Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTS
. 85-88.
2002
Study on large-signal linearity and efficiency of AlGaN/GaN MODFETs
Full Text via DOI:
10.1109/EUMA.2002.339300
2002
Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors
.
JAPANESE JOURNAL OF APPLIED PHYSICS
. 1124-1130.
Full Text via DOI:
10.1143/jjap.41.1124
2001
First InP/InGaAs PNP HBT Grown by Metal Organic Chemical Vapor Deposition
. 224-227.
Full Text via DOI:
10.1109/iciprm.2001.929098
2001
III-V nitride-based two terminal devices for high power, high-frequency applications
. 384-387.
Full Text via DOI:
10.1109/ISDRS.2001.984523
2001
Integration of complementary NPN and PNP InAlAs/InGaAs HBTs
. 497-500.
2001
Low noise ALGaN/GaN MODFETs with high breakdown and power characteristics
. 229-232.
2001
Low noise, high-speed InP/InGaAs HBTs
. 188-191.
2000
Current-injection characterization of breakdown in AlGaN/GaN MODFETs
. 84-92.
2000
Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using InAlAs/InGaAs heterojunction bipolar transistors
. 259-262.
2000
Broadband AlGaN/GaN HEMT MMIC attenuators with high dynamic range
Full Text via DOI:
10.1109/EUMA.2000.338705
2000
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
2000
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
Full Text via DOI:
10.1557/s1092578300005056
1999
Large-signal characteristics of AlGaN/GaN power MODFETs
. 533-536.
1999
Material properties of GaN in the context of electron devices
1999
NPN-PNP InP HBT technology and applications to low power wireless systems
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
. 11-20.
1999
Optimal design and experimental characterization of high-gain GaInP/GaAs HBT distributed amplifiers
. 685-688.
1999
Material properties of GaN in the context of electron devices
Full Text via DOI:
10.1557/s1092578300002209
1999
Modeling of Highly-Nonlinear HBT Characteristics using a Distributed Thermal Subcircuit Derived from Pulsed Measurements
Full Text via DOI:
10.1109/ARFTG.1999.327347
1998
77 GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodes
. 177-180.
1998
High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers
. 661-664.
1998
Ka-band SPSTs in InP-based technology using coplanar waveguides
. 427-430.
1998
Metalorganic chemical vapor deposition (MOCVD) material growth and application to InP-based electronic devices
. 477-480.
1998
New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
. 751-756.
1998
Power performance of PNP InAlAs/InGaAs HBTs
. 72-75.
1998
Power-handling capability of w-band InGaAs pin diode switches
. 199-202.
1998
GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
. 39-42.
1998
GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
. 179-182.
1998
W-band on-wafer load-pull measurement system and its application to HEMT characterization
. 1479-1482.
1997
AlGaAs/GaAs HBT reliability: Dependence on material and correlation to baseband noise
. 157-160.
1997
AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise
1997
Noise in high speed devices
. 11-16.
1997
Fourier transform infrared spectroscopy (FTIR), SIMS and Raman scattering of heavily carbon doped MOCVD grown In
0.53
Ga
0.47
As
. 311-314.
Full Text via DOI:
10.1109/ISCS.1998.711643
1997
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN
. 219-222.
Full Text via DOI:
10.1109/ISCS.1998.711620
1997
Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy
. 57-60.
Full Text via DOI:
10.1109/ISCS.1998.711547
1997
Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy
. 439-442.
Full Text via DOI:
10.1109/ISCS.1998.711687
1997
InGaAs PIN diodes for high-isolation W-band monolithic integrated switching applications
. 332-340.
Full Text via DOI:
10.1109/cornel.1997.649374
1997
Low-frequency noise characterization of high- A nd low-reliability AlGaAs/GaAs single HBTs
. 447-450.
Full Text via DOI:
10.1109/ISCS.1998.711691
1997
New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures
. 525-528.
1997
Performance optimization of PNP InAlAs/InGaAs HBTs
. 269-277.
Full Text via DOI:
10.1109/cornel.1997.649367
1997
Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties
. 307-312.
Full Text via DOI:
10.1557/proc-482-307
1996
W-band InGaAs/InP PIN diode monolithic integrated switches
. 285-288.
1996
InGaAs-based mm-wave integrated subharmonic mixer exhibiting low input power requirement and low noise characteristics
. 57-60.
1996
Power performance of InGaAs/InP single HBTs
. 133-136.
1995
Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors
. 243-252.
1995
Low-noise mm-wave integrated InGaAs-based mixers
. 253-256.
1995
Characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD using ferrocene
. 432-435.
1995
Heavily carbon doped InGaAs lattice matched to InP grown by LP-MOCVD using TMIn, TMGa and liquid CCl
4
. 144-147.
1995
Heterojunction bipolar transistor large-signal model for high power microwave applications
. 1231-1234.
1995
Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design
. 648-651.
1995
Use of spectrally resolved scanning photoluminescence for optimizing the growth conditions of InAlAs/InP heterostructures
. 241-244.
1994
Deep level characterization of LP-MOCVD Al
0.48
In
0.52
As
. 235-239.
1994
Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors
. 399-402.
1994
InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology
. 595-598.
1994
MOCVD growth parameter study of InP-based materials for high-performance HEMT's
. 431-434.
1994
Quasi-1D channel InAlAs/InGaAs HEMT's with improved f
max
characteristics
. 591-594.
1994
Raman scattering and x-ray diffraction studies of gallium nitride films grown on (100) gallium arsenide
. 503-508.
Full Text via DOI:
10.1557/proc-339-503
1993
High speed monolithically integrated pin-MODFET transimpedance photoreceivers
. 375-382.
1993
Miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer
. 215-218.
1993
New analytic determination of f
T
, f
MAX
and the frequency dependence of current gain and power gain in HBTs
. 75-82.
1993
A D-band monolithic fundamental oscillator using InP-based HEMTs
. 10.
Full Text via DOI:
10.1109/mcs.1993.247479
1993
A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer
. 505-508.
Full Text via DOI:
10.1109/iciprm.1993.380573
1993
Characterization of MESFET and MODFET microwave noise properties utilizing drain noise current
. 1099-1102.
1993
Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p
-
-n
-
collector structure
. 25-28.
1993
New pseudomorphic In
0.2
Ga
0.8
As HEMT using Al
0.52
In
0. 48
P as barrier layer
. 505-508.
1993
Submicron pseudomorphic double heterojunction InAlAs/In
0.7
Ga
0. 3
As/InAkAs HEMT's with high cut-off and current-drive capability
. 465-468.
1993
Time-domain network analysis of MM-wave circuits based on photoconductive probe sampling technique
. 1359-1362.
1992
Analysis and optimization of third order intermodulation distortion mechanisms in AlGaAs/GaAs heterojunction bipolar transistors
. 1587-1590.
1992
Direct calculation of the HBT equivalent circuit from measured S-parameters
. 735-738.
1992
Investigation of HBT oscillator noise through 1/f noise and noise upconversion studies
. 727-730.
1992
0.1μm MOVPE grown InAIAs/InGaAs hemts with above 150GHz operation capability
. 18-21.
Full Text via DOI:
10.1109/ICIPRM.1992.235700
1992
1/f noise characteristics of InP/InGaAs heterojunction bipolar transistor's
. 364-367.
Full Text via DOI:
10.1109/ICIPRM.1992.235676
1992
180 GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler
. 165-168.
1992
A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs
. 51-54.
Full Text via DOI:
10.1109/GAAS.1992.247225
1992
A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP
. 67-70.
Full Text via DOI:
10.1109/GAAS.1992.247221
1992
Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation
. 410-413.
Full Text via DOI:
10.1109/ICIPRM.1992.235577
1992
Control of InP/InGaAs heterojunction bipolar transistor performance through the use of undoped collectors
. 104-113.
1992
Current status of heterojunction bipolar and high-electron mobility transistor technologies
. 305-312.
1992
F
max
-enhancement in cbe-grown InAIAs/InGaAs HEMT's using novel self-aligned offset-gate technology
. 360-363.
Full Text via DOI:
10.1109/ICIPRM.1992.235677
1992
Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 μm InAlAs/InGaAs HEMT's
. 141-150.
1992
High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs
. 263-266.
1992
High performance E/D-mode InAIAs/InGaAs HIGFET technology and integrated logic functions
. 499-502.
Full Text via DOI:
10.1109/ICIPRM.1992.235642
1992
Novel high-impedance photoconductive sampling probe for ultra-high speed circuit characterization
. 19-22.
Full Text via DOI:
10.1109/GAAS.1992.247232
1991
1/f Noise in AlGaAs/GaAs HBTs using ultrasensitive characterization techniques for identifying noise mechanisms
. 317-322.
1991
In
0.52
Al
0.48
As/In
0.53
Ga
0.47
As HIGFETS using novel 0.2 μm self-aligned T-gate technology
. 275-280.
1991
InAlAs/In
x
Ga
1-x
As HIGFET's (x ≥ 0.53) for E/D FET logic applications
. 242-245.
1991
Large-signal modeling and study of power saturation mechanisms in heterojunction bipolar transistors
. 127-130.
1991
Monolithically integrated In
0.60
Ga
0.47
As/ In
0.52
Al
0.48
As/InP photoreceivers with submicron devices
. 407-410.
1991
Reliability issues of InAlAs/InGaAs high-electron-mobility transistors
. 349-352.
1991
Automated On-Wafer Noise and Load Pull Characterization Using Precision Computer Controlled Electromechanical Tuners
. 66-75.
Full Text via DOI:
10.1109/arftg.1991.324021
1991
Invited paper: Millimeter-wave and optoelectronic applications of heterostructure integrated circuits
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
. 450-466.
Full Text via DOI:
10.1117/12.24516
1991
InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications
. 242-245.
Full Text via DOI:
10.1109/iciprm.1991.147465
1991
Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators
. 161-166.
Full Text via DOI:
10.1109/EUMA.1991.336427
1991
Millimeter-wave and optoelectronic applications of heterostructure integrated circuits
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
. 450-466.
1991
Monolithically integrated In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP photoreceivers with submicron devices
. 407-410.
Full Text via DOI:
10.1109/iciprm.1991.147399
1991
Real time x-ray studies of semiconductor device structures
.
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII
. 2-12.
Full Text via DOI:
10.1117/12.47673
1990
HEMT control circuits for monolithic InP applications
. 429-436.
1990
Monolithically integrated In
0.53
Ga
0.47
As/In
0.52
Al
0.48
As front-end photoreceivers realized by molecular beam epitaxy and regrowth techniques
. 86-87.
1990
Transient and steady-state Monte-Carlo simulation of the effects of junction grading on carrier transport in InAlAs/InGaAs HBT's
. 439-442.
1990
W-band monolithic mixer using InAlAs/InGaAs HEMT
. 181-184.
1990
InP based monolithic integrated HEMT amplifiers and their material sensitivity
. 959-964.
Full Text via DOI:
10.1109/euma.1990.336189
1990
Submicron double heterojunction strained InAlAs/InGaAs HEMTs: An experimental study of DC and microwave properties
. 424-427.
Full Text via DOI:
10.1109/iciprm.1990.203059
1990
p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures
. 17-20.
Full Text via DOI:
10.1109/iciprm.1990.202979
1989
Low-frequency properties of lattice matched and strained InGaAs/InAlAs HEMT's
. 73-82.
1989
Monolithically integrated GaAs-based and InP-based front-end photoreceivers
. 353-361.
1988
HEMT monolithic double channel attenuator with broadband characteristics and wide dynamic range
. 999-1004.
1988
Monolithic integrated circuit applications of InGaAs/InAlAs HEMT's
. 293-296.
1988
Use of double heterojunction diodes in monolithic phase shifters
. 1005-1010.
Full Text via DOI:
10.1109/euma.1988.333941
1987
STUDY OF CHARGE CONTROL IN n- AND p-TYPE LATTICE MATCHED AND STRAINED CHANNEL MODFETS WITH GaAs AND InP SUBSTRATES.
. 70-79.
1987
COMPARATIVE STUDY OF TEGFET AND MESFET LARGE SIGNAL CHARACTERISTICS AND SATURATION MECHANISMS.
. 553-556.
1987
EFFECT OF CHANNEL STRAIN ON THE ELECTRICAL CHARACTERISTICS OF InGaAs/InAlAs HEMTs.
. 427-430.
Full Text via DOI:
10.1109/iedm.1987.191449
1985
TOLERANCED EQUIVALENT CIRCUIT ELEMENTS AS A FUNCTION OF GATE AND DRAIN VOLTAGES FOR MMIC GAAS FETS AND TEGFETS.
. 1025-1030.
1984
HIGHLY ACCURATE DESIGN OF SPIRAL INDUCTORS FOR MMIC's WITH SMALL SIZE AND HIGH CUT-OFF FREQUENCY CHARACTERISTICS.
. 106-110.
1984
HIGHLY ACCURATE DESIGN OF SPIRAL INDUCTORS FOR MMICs WITH SMALL SIZE AND HIGH CUT-OFF FREQUENCY CHARACTERISTICS.
. 91-95.
1983
NEW, SPECIFICALLY MONOLITHIC APPROACH TO MICROWAVE POWER AMPLIFIERS.
. 54-58.
1978
CIRCULAR COMPOSITE DIELECTRIC WAVEGUIDES AND THEIR APPLICATION IN HE
11
MODE HIGH POWER MICROWAVE HEATING SYSTEMS.
. 584-588.
Letter
2002
Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs
.
IEEE ELECTRON DEVICE LETTERS
. 688-690.
Full Text via DOI:
10.1109/LED.2002.805756
Other Scholarly Work
2021
Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices (vol 68, pg 3034, 2021)
.
IEEE TRANSACTIONS ON ELECTRON DEVICES
. 4806-4806.
Full Text via DOI:
10.1109/TED.2021.3092080
Web of Science:
000686761500106
2011
Erratum: Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes (Applied Surface Science (2010) 257 (388-392))
.
APPLIED SURFACE SCIENCE
. 2413.
Full Text via DOI:
10.1016/j.apsusc.2010.09.077
2000
Erratum: Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference (Appl. Phys. Lett. (2000) 76 (810) (10.1063/1.125592))
.
APPLIED PHYSICS LETTERS
. 1479.
Full Text via DOI:
10.1063/1.126069
Review
2014
Electron field emission from nanostructured semiconductors under photo illumination
. 543-562.
Full Text via DOI:
10.3906/fiz-1407-1
1999
Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors
. 1801-1808.
Full Text via DOI:
10.1016/S0026-2714(99)00188-2
Research
principal investigator on
Field Emitter Robust Vacuum Integrated Nanoelectronics (FERVIN)
awarded by
Air Force Office of Scientific Research
2019 - 2025
Variable Temperature High-Frequency Microprobe and Scanning Anode Field Emission System for Vacuum Integrated Nanoelectronics
awarded by
Air Force Office of Scientific Research
2021 - 2024
Wide-Bandgap (WBG) Semiconductor Workshop for Next Generation High-Frequency
awarded by
Army Research Office
2020 - 2024
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
awarded by
National Science Foundation
2020 - 2024
Scanning Anode Field Emission and Variable Temperature High-Frequency Microprobe System for Vacuum Integrated Nanoelectronics
awarded by
U.S. Department of Defense
2019 - 2020
co-principal investigator on
Grant
IUCRC Phase I Florida International University:Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS)
awarded by
National Science Foundation
2021 - 2026
Atomic Layer Deposition Tool for High Power Density and Reliability with Nanoscale Devices
awarded by
Army Research Office
2022 - 2024
SEGAS: Slow-wave Enhanced Gain Amplifiers at Sub-Terahertz
awarded by
U.S. Department of Defense
2021 - 2022
SII Planning: Center for Next Generation Wireless Spectrum Sharing
awarded by
National Science Foundation
2020 - 2022
investigator on
IUCRC Phase 1 Florida International University: Center for Infrastructure Trustworthiness in Energy Systems (CITES)
awarded by
National Science Foundation
2021 - 2026
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