Scholarly & Creative Works
selected scholarly works & creative activities
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Article
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2024Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System. JOURNAL OF ELECTRONIC MATERIALS. 53:1414-1424.Full Text via DOI: 10.1007/s11664-023-10894-w Web of Science: 001143729000002
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2021Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVDFull Text via DOI: 10.3390/photonics8120578 Web of Science: 000738079500001
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2021Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES. 68:3034-3039.Full Text via DOI: 10.1109/TED.2021.3076031 Web of Science: 000652799800069
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2021(Invited) III-Nitrides for Vacuum NanoelectronicsFull Text via DOI: 10.1149/ma2021-01331068mtgabs
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2018Optically adjustable valley Hall current in single-layer transition metal dichalcogenides. JOURNAL OF APPLIED PHYSICS. 123.Full Text via DOI: 10.1063/1.5004442
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2013Experimental demonstration and observation of a plasmon wave occuring at a GaAs-Au-GaN interface. OPTICS LETTERS. 38:2425-2427.Full Text via DOI: 10.1364/OL.38.002425
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2012Magnetic and luminescent properties of manganese-doped ZnSe crystals. PHYSICA B. 407:3802-3807.Full Text via DOI: 10.1016/j.physb.2012.05.064
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2012Gallium-nitride-based plasmonic multilayer operating at 1.55 μm. OPTICS LETTERS. 37:3039-3041.Full Text via DOI: 10.1364/OL.37.003039
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2012Photoluminescence study of ZnO nanostructures grown on silicon by MOCVD. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 177:594-599.Full Text via DOI: 10.1016/j.mseb.2012.03.008
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2012Design and maskless fabrication of ultrathin suspended membranes of GaN. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. 6:148-150.Full Text via DOI: 10.1002/pssr.201206020
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2012Inside Back Cover: Design and maskless fabrication of ultrathin suspended membranes of GaN (Phys. Status Solidi RRL 4/2012). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. 6.Full Text via DOI: 10.1002/pssr.201290008
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2012Field emission from ZnO whiskers under intervalley electron redistribution. APPLIED SURFACE SCIENCE. 258:4990-4993.Full Text via DOI: 10.1016/j.apsusc.2012.01.153
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2012Vertically aligned multiwalled carbon nanotubes for pressure, tactile and vibration sensing. NANOTECHNOLOGY. 23.Full Text via DOI: 10.1088/0957-4484/23/8/085501
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2012GaN surface electron field emission efficiency enhancement by low-energy photon illumination. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 30.Full Text via DOI: 10.1116/1.3692253
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2012Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 30.Full Text via DOI: 10.1116/1.4732117
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2011Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy. APPLIED PHYSICS LETTERS. 98.Full Text via DOI: 10.1063/1.3582055
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2011In situ interferometry of MOCVD-grown ZnO for nucleation-layer-based optimization and nanostructure formation monitoring. JOURNAL OF ELECTRONIC MATERIALS. 40:453-458.Full Text via DOI: 10.1007/s11664-011-1515-2
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2011Determination of satellite valley position in GaN emitter from photoexcited field emission investigations. JOURNAL OF APPLIED PHYSICS. 109.Full Text via DOI: 10.1063/1.3533770
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2011Pronounced field emission from vertically aligned carbon nanotube blocks and bundles. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 29.Full Text via DOI: 10.1116/1.3532804
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2010Morphology, luminescence, and electrical resistance response to H 2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte. APPLIED SURFACE SCIENCE. 257:827-831.Full Text via DOI: 10.1016/j.apsusc.2010.07.074
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2010Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes. APPLIED SURFACE SCIENCE. 257:388-392.Full Text via DOI: 10.1016/j.apsusc.2010.06.089
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2010Synthetic-eddy method for urban atmospheric flow modelling. BOUNDARY-LAYER METEOROLOGY. 136:285-299.Full Text via DOI: 10.1007/s10546-010-9508-x
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2010Patterned growth of ultra long carbon nanotubes. Properties and systematic investigation into their growth process. JOURNAL OF MATERIALS CHEMISTRY. 20:1717-1721.Full Text via DOI: 10.1039/b919579c
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2010A novel method to form conducting channels in SiOx(Si) films for field emission application. JOURNAL OF APPLIED PHYSICS. 107.Full Text via DOI: 10.1063/1.3273394
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2010Flexible field emitter arrays with adjustable carbon nanotube distances and bundle generation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 28:268-272.Full Text via DOI: 10.1116/1.3298889
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2009Electron field emission from wide bandgap semiconductors under intervalley carrier redistribution. JOURNAL OF APPLIED PHYSICS. 106.Full Text via DOI: 10.1063/1.3259384
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2009Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 27:2079-2083.Full Text via DOI: 10.1116/1.3186615
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2009A self-supporting monolith of highly aligned carbon nanotubes as device structure for sensor applications. CHEMICAL COMMUNICATIONS. 3205-3207.Full Text via DOI: 10.1039/b900854c
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2008Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4. ELECTRONICS LETTERS. 44:1428-1429.Full Text via DOI: 10.1049/el:20081998
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2008Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy. JOURNAL OF APPLIED PHYSICS. 103.Full Text via DOI: 10.1063/1.2937257
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2008First observation of bias oscillations in GaN Gunn diodes on GaN substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES. 55:1563-1567.Full Text via DOI: 10.1109/TED.2008.921253
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2008Power characteristics of AlN/GaN MISFETs on sapphire substrate. ELECTRONICS LETTERS. 44:244-245.Full Text via DOI: 10.1049/el:20083261
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2007Measured negative differential resistivity for GaN Gunn diodes on GaN substrate. ELECTRONICS LETTERS. 43:480-481.Full Text via DOI: 10.1049/el:20070658
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2006Technology aspects of GaN-based diodes for high-field operation. SUPERLATTICES AND MICROSTRUCTURES. 40:363-368.Full Text via DOI: 10.1016/j.spmi.2006.07.026
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2006Formation of conducting nanochannels in diamond-like carbon filmsFull Text via DOI: 10.1088/0268-1242/21/9/018
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2006Low-frequency noise-based degradation prediction of Al xGa 1-xN/GaN MODFETsFull Text via DOI: 10.1109/TDMR.2006.882214
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2006Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 24:1556-1558.Full Text via DOI: 10.1116/1.2190677
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2006Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET. SOLID-STATE ELECTRONICS. 50:282-286.Full Text via DOI: 10.1016/j.sse.2005.12.006
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2006Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/Pdc of 7.2 GHz/mW. ELECTRONICS LETTERS. 42:25-26.Full Text via DOI: 10.1049/el:20062800
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2005High-resistivity GaN buffer templates and their optimization for GaN-based HFETs. JOURNAL OF CRYSTAL GROWTH. 284:297-305.Full Text via DOI: 10.1016/j.jcrysgro.2005.06.022
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2005Investigation of the impact of Al mole-fraction on the consequences of RF stress on Alx Ga1-x N/GaN MODFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 52:1933-1939.Full Text via DOI: 10.1109/TED.2005.852543
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2005Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier. ELECTRONICS LETTERS. 41:909-911.Full Text via DOI: 10.1049/el:20051461
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2005Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects. SOLID-STATE ELECTRONICS. 49:1352-1360.Full Text via DOI: 10.1016/j.sse.2005.05.009
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2005Gunn effect in field-emission phenomena. JOURNAL OF APPLIED PHYSICS. 97.Full Text via DOI: 10.1063/1.1847724
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2004Short-period intrinsic stark GaN/AlGaN superlattice as a Bloch oscillator. APPLIED PHYSICS LETTERS. 85:600-602.Full Text via DOI: 10.1063/1.1773913
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2004Quantum-size resonance tunneling in the field emission phenomenon. JOURNAL OF APPLIED PHYSICS. 96:867-877.Full Text via DOI: 10.1063/1.1760234
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2004Yellow luminescence centers of GaN. JAPANESE JOURNAL OF APPLIED PHYSICS. 43:2471-2472.Full Text via DOI: 10.1143/JJAP.43.2471
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2003Field emission from quantum size GaN structures. APPLIED SURFACE SCIENCE. 220:46-50.Full Text via DOI: 10.1016/S0169-4332(03)00750-5
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2003Optical characterization of AlN/GaN heterostructures. JOURNAL OF APPLIED PHYSICS. 94:4813-4818.Full Text via DOI: 10.1063/1.1609048
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2003Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation. JOURNAL OF APPLIED PHYSICS. 94:3875-3882.Full Text via DOI: 10.1063/1.1604950
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2003A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 50:1974-1982.Full Text via DOI: 10.1109/TED.2003.815367
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2003Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching. APPLIED PHYSICS LETTERS. 83:1551-1553.Full Text via DOI: 10.1063/1.1605231
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2003Electromagnetic Analysis of Plane Wave Illumination Effects Onto Passive and Active Circuit Topologies. IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS. 2:230-233.Full Text via DOI: 10.1109/LAWP.2003.819691 Web of Science: 000208265800064
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2002Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers. IEEE TRANSACTIONS ON ELECTRON DEVICES. 35:2435.Full Text via DOI: 10.1109/16.8848
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2002Comparison of DC high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition. IEEE TRANSACTIONS ON ELECTRON DEVICES. 49:725-732.Full Text via DOI: 10.1109/16.998577
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2002First demonstration of monolithic InP-based HBT amplifier with PNP active load. IEEE ELECTRON DEVICE LETTERS. 23:114-117.Full Text via DOI: 10.1109/55.988809
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2002A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT. SOLID-STATE ELECTRONICS. 46:249-253.Full Text via DOI: 10.1016/S0038-1101(01)00293-3
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2002Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures. JOURNAL OF ELECTRONIC MATERIALS. 31:395-401.Full Text via DOI: 10.1007/s11664-002-0090-y
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2001Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 48:1297-1303.Full Text via DOI: 10.1109/16.930642
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2001Noise characteristics of GaN-based IMPATTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 48:1473-1475.Full Text via DOI: 10.1109/16.930669
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2001Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs. IEEE ELECTRON DEVICE LETTERS. 22:197-199.Full Text via DOI: 10.1109/55.919227
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2001DC and high-frequency characteristics of GaN-based IMPATTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 48:820-822.Full Text via DOI: 10.1109/16.915735
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2001Fröhlich modes in GaN columnar nanostructures. PHYSICAL REVIEW B. 64.Full Text via DOI: 10.1103/PhysRevB.64.233317
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2001Investigation of gallium nitride T-ray transmission characteristics. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. 4591:210-220.Full Text via DOI: 10.1117/12.449150
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2000Design optimization and characterization of high-gain galnp/gaas hbt distributed amplifiers for high-bit-rate telecommunication. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 48:1030-1037.Full Text via DOI: 10.1109/22.904741
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2000Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs powerHBTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 47:677-686.Full Text via DOI: 10.1109/16.830979
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2000Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology. SOLID-STATE ELECTRONICS. 44:2059-2067.Full Text via DOI: 10.1016/S0038-1101(00)00074-5
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2000Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics. SOLID-STATE ELECTRONICS. 44:1847-1852.Full Text via DOI: 10.1016/S0038-1101(00)00030-7
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2000Power performance and scalability of AlGaN/GaN power MODFETs. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 48:1694-1700.Full Text via DOI: 10.1109/22.873897
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2000Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS. 88:1983-1986.Full Text via DOI: 10.1063/1.1303722
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2000Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 48:1038-1044.Full Text via DOI: 10.1109/22.904742
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2000Large-signal microwave performance of GaN-based NDR diode oscillators. SOLID-STATE ELECTRONICS. 44:941-947.Full Text via DOI: 10.1016/S0038-1101(00)00011-3
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2000Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs. SOLID-STATE ELECTRONICS. 44:739-746.Full Text via DOI: 10.1016/S0038-1101(99)00292-0
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2000Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference. APPLIED PHYSICS LETTERS. 76:810-812.Full Text via DOI: 10.1063/1.125592
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2000DC and high-frequency performance of AlGaN/GaN heterojunction bipolar transistors. SOLID-STATE ELECTRONICS. 44:245-252.Full Text via DOI: 10.1016/S0038-1101(99)00230-0
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2000Microwave potential of GaN-based Gunn devices. ELECTRONICS LETTERS. 36:176-178.Full Text via DOI: 10.1049/el:20000200
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2000A nonfundamental theory of low-frequency noise in semiconductor devices. IEEE TRANSACTIONS ON ELECTRON DEVICES. 47:2009-2017.Full Text via DOI: 10.1109/16.877159
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1999Spontaneous polarization and piezoelectric field in nitride semiconductor heterostructures. JOURNAL OF THE KOREAN PHYSICAL SOCIETY. 34:S224-S233.
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1999Low interface state density AlN/GaN MISFETs. ELECTRONICS LETTERS. 35:2145-2146.Full Text via DOI: 10.1049/el:19991407
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1999Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications. SOLID-STATE ELECTRONICS. 43:1429-1436.Full Text via DOI: 10.1016/S0038-1101(99)00085-4
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1999Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication. IEEE TRANSACTIONS ON ELECTRON DEVICES. 46:1302-1311.Full Text via DOI: 10.1109/16.772468
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1999InP-based complementary HBT amplifiers for use in communication systems. SOLID-STATE ELECTRONICS. 43:1507-1512.Full Text via DOI: 10.1016/S0038-1101(99)00096-9
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1999Low-power consumption InGaAs PIN diode switches for V-band applications. JAPANESE JOURNAL OF APPLIED PHYSICS. 38:1208-1210.Full Text via DOI: 10.1143/jjap.38.1208
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1999New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials. JAPANESE JOURNAL OF APPLIED PHYSICS. 38:992-995.Full Text via DOI: 10.1143/jjap.38.992
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1999Power performance of InP-based single and double heterojunction bipolar transistors. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 47:1449-1456.Full Text via DOI: 10.1109/22.780393
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1999Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 47:1439-1448.Full Text via DOI: 10.1109/22.780392
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1998InGaAs-schottky contacts made by in situ plated and evaporated pt-an analysis based on DC and noise characteristics. IEEE TRANSACTIONS ON ELECTRON DEVICES. 45:349-360.Full Text via DOI: 10.1109/16.658666
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1998The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures. APPLIED PHYSICS LETTERS. 72:338-340.Full Text via DOI: 10.1063/1.120729
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1998Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces. JOURNAL OF APPLIED PHYSICS. 84:5291-5295.Full Text via DOI: 10.1063/1.368816
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1998Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors. JOURNAL OF ELECTRONIC MATERIALS. 27:442-445.Full Text via DOI: 10.1007/s11664-998-0175-3
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1998Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS. 83:3829-3834.Full Text via DOI: 10.1063/1.366613
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1998Material Properties of GaN in the Context of Electron DevicesFull Text via DOI: 10.1557/proc-537-g1.2
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1997Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates. APPLIED PHYSICS LETTERS. 71:3880-3882.Full Text via DOI: 10.1063/1.120532
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1997Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 45:534-542.Full Text via DOI: 10.1109/22.566634
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1997DC to high-frequency hbt-model parameter evaluation using impedance block conditioned optimization. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 45:886-897.Full Text via DOI: 10.1109/22.588596
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1997MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics phil marsh. IEEE TRANSACTIONS ON ELECTRON DEVICES. 44:1066-1075.Full Text via DOI: 10.1109/16.595933
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1997InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology. IEEE TRANSACTIONS ON ELECTRON DEVICES. 44:1052-1059.Full Text via DOI: 10.1109/16.595931
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1997Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates. JOURNAL OF ELECTRONIC MATERIALS. 26:1-6.Full Text via DOI: 10.1007/s11664-997-0123-7
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1997InP-based millimeter-wave PIN diodes for switching and phase-shifting applications. SOLID-STATE ELECTRONICS. 41:1635-1639.Full Text via DOI: 10.1016/S0038-1101(97)00170-6
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1997Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 44:414-418.Full Text via DOI: 10.1016/s0921-5107(96)01791-6
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1996Delay time analysis of submicron InP-based HEMT's. IEEE TRANSACTIONS ON ELECTRON DEVICES. 43:228-237.Full Text via DOI: 10.1109/16.481722
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1996Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers. IEEE TRANSACTIONS ON ELECTRON DEVICES. 43:2053-2061.Full Text via DOI: 10.1109/16.544374
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1996Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures. IEEE TRANSACTIONS ON ELECTRON DEVICES. 43:2046-2052.Full Text via DOI: 10.1109/16.544373
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1996Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors. APPLIED PHYSICS LETTERS. 69:3039-3041.Full Text via DOI: 10.1063/1.116832
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1996Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS. 80:1823-1829.Full Text via DOI: 10.1063/1.362994
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1996Analysis of the large-signal characteristics of InP/ InGaAs-based optoelectronic preamplifiers. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 11:163-168.Full Text via DOI: 10.1002/(sici)1098-2760(19960220)11:3<163::aid-mop14>3.0.co;2-c
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1996Special Issue on the 7th International Conference on Indium Phosphide and Related Materials. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 11:113-114.Full Text via DOI: 10.1002/(sici)1098-2760(19960220)11:3<113::aid-mop1>3.0.co;2-o
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1996Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4. JOURNAL OF ELECTRONIC MATERIALS. 25:449-455.Full Text via DOI: 10.1007/BF02666619
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1996Mass spectroscopy study of GaN metalorganic chemical vapor deposition. JOURNAL OF ELECTRONIC MATERIALS. 25:1554-1560.Full Text via DOI: 10.1007/bf02655399
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1996Material and electrical characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD. JOURNAL OF ELECTRONIC MATERIALS. 25:627-632.Full Text via DOI: 10.1007/bf02666514
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1995Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs. JOURNAL OF APPLIED PHYSICS. 77:1705-1709.Full Text via DOI: 10.1063/1.358862
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1995Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition. JOURNAL OF ELECTRONIC MATERIALS. 24:213-218.Full Text via DOI: 10.1007/BF02659677
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1995Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In0.7Ga0.3As/InA1As HEMT's. IEEE TRANSACTIONS ON ELECTRON DEVICES. 42:1017-1025.Full Text via DOI: 10.1109/16.387231
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1995Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 42:219-229.Full Text via DOI: 10.1109/16.370076
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1995Material and device properties of MOCVD grown InAlAs InGaAs HEMTs. SOLID-STATE ELECTRONICS. 38:1697-1701.Full Text via DOI: 10.1016/0038-1101(95)00045-U
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1995Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH3. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 32:69-74.Full Text via DOI: 10.1016/0921-5107(94)01149-4
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1995Phasor Diagram Analysis of Millimeter-Wave HEMT Mixers. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 43:2165-2167.Full Text via DOI: 10.1109/22.466174
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1995The Role of Baseband Noise and Its Upconversion in HBT Oscillator Phase Noise. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 43:1461-1471.Full Text via DOI: 10.1109/22.392903
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1994Quantum state transfer in double-quantum-well devices. JOURNAL OF APPLIED PHYSICS. 76:7428-7436.Full Text via DOI: 10.1063/1.357969
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1994Theoretical study of GaN growth: A Monte Carlo approach. JOURNAL OF APPLIED PHYSICS. 76:3502-3510.Full Text via DOI: 10.1063/1.357479
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1994Volterra series based nonlinear simulation of HBTs using analytically extracted models. ELECTRONICS LETTERS. 30:1098-1100.Full Text via DOI: 10.1049/el:19940694
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1994Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations. IEEE TRANSACTIONS ON ELECTRON DEVICES. 41:637-642.Full Text via DOI: 10.1109/16.285009
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1994A 100-GHz Monolithic Cascode InAlAs/InGaAs HEMT OscillatorFull Text via DOI: 10.1109/75.289518
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1994A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources. IEEE ELECTRON DEVICE LETTERS. 15:380-382.Full Text via DOI: 10.1109/55.320974
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1994Optimization of MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 41:1489-1497.Full Text via DOI: 10.1109/16.310098
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1994Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 41:1347-1350.Full Text via DOI: 10.1109/16.297728
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1993Deep Level Characterization of Lp-Mocvd Grown Al0.48In0.52AsFull Text via DOI: 10.1557/proc-325-235
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1993Modulation-doped In0.48Al0.52P/In 0.2Ga0.8As field-effect transistors. APPLIED PHYSICS LETTERS. 62:1105-1107.Full Text via DOI: 10.1063/1.108756
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1993Material related issues and their characterization with a view to III-V heterojunction device optimization. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 20:1-8.Full Text via DOI: 10.1016/0921-5107(93)90386-2
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1993Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE. JOURNAL OF CRYSTAL GROWTH. 127:25-28.Full Text via DOI: 10.1016/0022-0248(93)90570-M
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1993A D-Band Monolithic Fundamental Oscillator Using InP-Based HEMT’s. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 41:2336-2344.Full Text via DOI: 10.1109/22.260726
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1993Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 40:2-8.Full Text via DOI: 10.1109/16.249416
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1993Experimental Characteristics and Performance Analysis of Monolithic InP-Based HEMT Mixers at W-Band. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 41:1-8.Full Text via DOI: 10.1109/22.210222
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1993High-Performance Monolithic PINMODFET Transimpedance Photoreceiver. IEEE PHOTONICS TECHNOLOGY LETTERS. 5:913-915.Full Text via DOI: 10.1109/68.238252
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1992A physics-based fitting and extrapolation method for measured impact ionization coefficients in III-V semiconductors. JOURNAL OF APPLIED PHYSICS. 72:531-538.Full Text via DOI: 10.1063/1.351884
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1992InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE. JOURNAL OF CRYSTAL GROWTH. 120:184-188.Full Text via DOI: 10.1016/0022-0248(92)90388-Y
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1992Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 39:2711-2719.Full Text via DOI: 10.1109/16.168753
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1992Current status of heterojunction bipolar and high-electron mobility transistor technologies. MICROELECTRONIC ENGINEERING. 19:305-312.Full Text via DOI: 10.1016/0167-9317(92)90443-U
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1992Evaluation of the factors determining hbt high-frequency performance by direct analysis of s-parameter data. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 40:2367-2373.Full Text via DOI: 10.1109/22.179903
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1992Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52Al0.48As/InxGal-xAs HEMT’s. IEEE TRANSACTIONS ON ELECTRON DEVICES. 39:523-532.Full Text via DOI: 10.1109/16.123473
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1992Mechanisms determining third order intermodulation distortion in algaas/gaas heterojunction bipolar transistors. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 40:2374-2380.Full Text via DOI: 10.1109/22.179904
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1992Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 39:1273-1281.Full Text via DOI: 10.1109/16.137304
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1992Novel course on Microwave Monolithic Integrated Circuit (MMIC) theory and characterization. IEEE TRANSACTIONS ON EDUCATION. v:73-84.
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1992Single and Dual p-Doped Channel In0.52A10.48As/InxGa1-xAs (x = 0.53, 0.65) FET’s and the Role of Doping. IEEE TRANSACTIONS ON ELECTRON DEVICES. 39:466-472.Full Text via DOI: 10.1109/16.123464
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1991Enhanced annealing kinetics in ion-implanted InxAl 1-xAs studied by x-ray diffractometry. APPLIED PHYSICS LETTERS. 58:2267-2269.Full Text via DOI: 10.1063/1.104895
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1991Self-consistent analysis of lattice-matched and pseudomorphic quantum-well emission transistors. JOURNAL OF APPLIED PHYSICS. 69:2662-2666.Full Text via DOI: 10.1063/1.348660
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1991Monolithically integrated planar front-end photoreceivers with 0.25µm gate pseudomorphic in0.60Ga0.40As/In0.52AI0.48As/InP modulation-doped field-effect transistors. ELECTRONICS LETTERS. 27:364-366.Full Text via DOI: 10.1049/el:19910230
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1991Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 4:38-43.Full Text via DOI: 10.1002/mop.4650040112
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1991Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52A10.48As/InxGa1-x, As HEMT’s. IEEE TRANSACTIONS ON ELECTRON DEVICES. 38:862-870.Full Text via DOI: 10.1109/16.75216
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1991In0.52A10.48As/InxGa1-xAs (0.53 ≤ x ≤ 0.70) lattice-matched and strained heterostructure insulated-gate FET’s. IEEE TRANSACTIONS ON ELECTRON DEVICES. 38:1999-2005.Full Text via DOI: 10.1109/16.83721
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1991Monolithically Integrated InP-Based Front-End Photoreceivers. IEEE TRANSACTIONS ON ELECTRON DEVICES. 38:1324-1333.Full Text via DOI: 10.1109/16.81623
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1991The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s. IEEE ELECTRON DEVICE LETTERS. 12:360-362.Full Text via DOI: 10.1109/55.103607
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1991Theoretical Analysis of HEMT Breakdown Dependence on Device Design Parameters. IEEE TRANSACTIONS ON ELECTRON DEVICES. 38:213-221.Full Text via DOI: 10.1109/16.69897
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1990Performance characteristics of In0.6Ga0.4As/In 0.52Al0.48As modulation-doped field-effect transistor monolithically integrated with In0.53Ga0.47As p-i-n photodiodes. JOURNAL OF APPLIED PHYSICS. 68:1918-1920.Full Text via DOI: 10.1063/1.346584
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1990The relation of the performance characteristics of pseudomorphic In 0.53+xGa0.47-x As/In0.52Al0.48As (0≤x≤0.32) modulation-doped field-effect transistors to molecular-beam epitaxial growth modes. JOURNAL OF APPLIED PHYSICS. 68:347-350.Full Text via DOI: 10.1063/1.347140
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1990Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures. IEEE TRANSACTIONS ON ELECTRON DEVICES. 37:2141-2147.Full Text via DOI: 10.1109/16.59902
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1990New generation MMIC amplifier using InGaAs/InAlAs HEMTs. ELECTRONICS LETTERS. 26:264-266.Full Text via DOI: 10.1049/el:19900176
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1990Transport Equation Approach For Heterojunction Bipolar Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES. 37:519-529.Full Text via DOI: 10.1109/16.47753
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1990W-Band Monolithic Oscillator Using InAiAs/InGaAs HEMT. ELECTRONICS LETTERS. 26:1425-1426.Full Text via DOI: 10.1049/el:19900914
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1989Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design. IEEE ELECTRON DEVICE LETTERS. 10:114-116.Full Text via DOI: 10.1109/55.31686
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1989A Novel Course on Microwave Monolithic Integrated Circuit (MMIC) Theory and Characterization. IEEE TRANSACTIONS ON EDUCATION. 32:73-84.Full Text via DOI: 10.1109/13.28036
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1989Design and Experimental Characteristics of Strained In0.52Alo.48As/InxGa1_x As (x > 0.53) HEMT's. IEEE TRANSACTIONS ON ELECTRON DEVICES. 36:2249-2259.Full Text via DOI: 10.1109/16.40907
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1989Monte Carlo Approach to Transient Analysis of HBT's with Different Collector Designs. IEEE ELECTRON DEVICE LETTERS. 10:55-57.Full Text via DOI: 10.1109/55.32427
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1989Studies of the DC, Low-Frequency, and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMT's. IEEE TRANSACTIONS ON ELECTRON DEVICES. 36:2288-2298.Full Text via DOI: 10.1109/16.40913
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1989Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching. IEEE TRANSACTIONS ON ELECTRON DEVICES. 36:2138-2145.Full Text via DOI: 10.1109/16.40893
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1988Low- and high-field transport properties of pseudomorphic In xGa1-xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructures. JOURNAL OF APPLIED PHYSICS. 64:1945-1949.Full Text via DOI: 10.1063/1.341748
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1988An Analytical Approach to the Capacitance-Voltage Characteristics of Double-Heterojunction HEMT’s. IEEE TRANSACTIONS ON ELECTRON DEVICES. 35:1223-1231.Full Text via DOI: 10.1109/16.2541
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1988An Investigation of the Power Characteristics and Saturation Mechanisms in HEMT’s and MESFET’s. IEEE TRANSACTIONS ON ELECTRON DEVICES. 35:1197-1206.Full Text via DOI: 10.1109/16.2538
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1988Characteristics of Strained In0.65Ga0.35As/ In0.52Al0.48As HEMT with Optimized Transport Parameters. IEEE ELECTRON DEVICE LETTERS. 9:439-441.Full Text via DOI: 10.1109/55.6938
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1988IIB-5 Theoretical and Experimental Studies of Monolithically Integrated Pseudomorphic InGaAs/AlGaAs MODFET-APD Photoreceivers. IEEE TRANSACTIONS ON ELECTRON DEVICES. 35:2435.Full Text via DOI: 10.1109/16.8847
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1988Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties. APPLIED PHYSICS LETTERS. 52:728-730.Full Text via DOI: 10.1063/1.99361
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1988The Influence of Device Physical Parameters on HEMT Large Signal Characteristics. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 36:239-249.Full Text via DOI: 10.1109/22.3511
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1988The Influence of Ion-Implanted Profiles on the Performance of GaAs MESFET#x2019;s and MMIC Amplifiers. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 36:642-652.Full Text via DOI: 10.1109/22.3568
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1988X-band varactor tuned monolithic GaAs FET oscillators†Full Text via DOI: 10.1080/00207218808962847
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1987GaAs Monolithic Integrated Optical Preamplifier. JOURNAL OF LIGHTWAVE TECHNOLOGY. 5:355-366.Full Text via DOI: 10.1109/JLT.1987.1075520
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1978Performance of a novel dielectric waveguide system for microwave power utilisation by divers. ELECTRONICS LETTERS. 14:262-264.Full Text via DOI: 10.1049/el:19780179
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1978Dynamic Considerations of Injection Locked Pulsed Oscillators with Very Fast Switching Characteristics. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 26:162-169.Full Text via DOI: 10.1109/TMTT.1978.1129337
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1976The Design and Performance of Three-Line Microstrip Couplers. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. 24:631-640.Full Text via DOI: 10.1109/TMTT.1976.1128928
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Book
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2015Vacuum Nanoelectronic Devices: Novel Electron Sources and ApplicationsFull Text via DOI: 10.1002/9781119037989
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Book Chapter
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2017Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition. 351-354.Full Text via DOI: 10.1201/9781315140810-71
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1996GaN and Related Compounds for Wide Bandgap Applications. 291-302.Full Text via DOI: 10.1007/978-94-009-1746-0_26
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Conference
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2023Planar mmWave Traveling Wave Amplifier on GaN/AlGaN Heterostructure. 2011 IEEE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION (APSURSI). 1247-1248.Full Text via DOI: 10.1109/USNC-URSI52151.2023.10238091
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2018A review of the growth, doping & applications of β-Ga2O3 thin films. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII.Full Text via DOI: 10.1117/12.2302471
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2017Introduction: Why do we need THz and where are we now?. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. ix-x.Full Text via DOI: 10.1117/12.2296952
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2014A GaN schottky diode-based analog phase shifter MMIC. 96-99.Full Text via DOI: 10.1109/EuMIC.2014.6997800
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2012DC and high-frequency characteristics of GaN schottky varactors for frequency multiplication. 1348-1353.Full Text via DOI: 10.1587/transele.E95.C.1348
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2012High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application. 1354-1362.Full Text via DOI: 10.1587/transele.E95.C.1354
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2012Prospective for gallium nitride-based opticalwaveguide modulators. 1363-1368.Full Text via DOI: 10.1587/transele.E95.C.1363
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2010
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2010P2-9: Vertically aligned carbon nanotube bundles with pronounced field emission. 139-140.Full Text via DOI: 10.1109/IVNC.2010.5563126
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2010Backside gate thin film transistor based on MOCVD grown ZnO on SiO 2/Si substrates. 237-238.Full Text via DOI: 10.1109/DRC.2010.5551981
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2010Peculiarities of the photon-assisted field emissions from GaN nanorods. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. C2-A76.Full Text via DOI: 10.1116/1.3368463
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2009Field emission from quantum structures and concepts for suitable microwave circuit structures. 77-78.Full Text via DOI: 10.1109/IVNC.2009.5271621
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2009The peculiarities of the photon assisted field emissions from GaN nanorods. 121-122.Full Text via DOI: 10.1109/IVNC.2009.5271848
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2009Electron field emission from wide band-gap semiconductors (GAN). 271-272.Full Text via DOI: 10.1109/IVELEC.2009.5193535
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2008Electron field emission from nanostructured surfaces of GaN and AlGaN. 425-430.Full Text via DOI: 10.1002/pssc.200777450
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2007AIN/GaN MISFET for high frequency applications: Physical simulation and experimental evaluation. 219-222.Full Text via DOI: 10.1109/EMICC.2007.4412688
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2007GaN/air gap based micro-opto-electro-mechanical (MOEM) Fabry-Pérot filters. 2764-2767.Full Text via DOI: 10.1002/pssc.200674730
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2006First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator. 153-156.Full Text via DOI: 10.1109/EMICC.2006.282774
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2006Improvement of CO sensitivity in GaN-based gas sensors. 1047-1051.Full Text via DOI: 10.1093/ietele/e89-c.7.1047
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2006Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications. 1037-1041.Full Text via DOI: 10.1093/ietele/e89-c.7.1037
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2006Technology of wide-bandgap diode structures for highfrequency operation. 85-92.Full Text via DOI: 10.1109/SMICND.2006.283938
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2005First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs. 101-103.Full Text via DOI: 10.1109/MWSYM.2005.1516531
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2004
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2004
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2004
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2004Proceedings of SPIE - The International Society for Optical Engineering: Introduction. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII.
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2003Peculiarities of the electron field emission from quantum-size structures. APPLIED SURFACE SCIENCE. 160-168.Full Text via DOI: 10.1016/S0169-4332(03)00283-6
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2003
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2003Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs. 119-122.Full Text via DOI: 10.1109/gaas.2003.1252377
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2003
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2003HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN. 253-262.Full Text via DOI: 10.1142/9789812796912_0020
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2003Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs. 78-81.Full Text via DOI: 10.1109/gaas.2003.1252366
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2002Fast and ultrafast processes in AlGaN/GaN channels. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 826-829.Full Text via DOI: 10.1002/1521-3951(200212)234:3<826::AID-PSSB826>3.0.CO;2-4
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2002Hot-phonon limited electron energy relaxation in AlN/GaN. 459-468.Full Text via DOI: 10.1142/S0129156402001381
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2002Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. 336-340.Full Text via DOI: 10.1016/S0921-5107(01)01045-5
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2002DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor. JAPANESE JOURNAL OF APPLIED PHYSICS. 1143-1149.Full Text via DOI: 10.1143/jjap.41.1143
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2002III-V Nitride electronics. 443-446.
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2002Study on large-signal linearity and efficiency of AlGaN/GaN MODFETsFull Text via DOI: 10.1109/EUMA.2002.339300
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2002Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors. JAPANESE JOURNAL OF APPLIED PHYSICS. 1124-1130.Full Text via DOI: 10.1143/jjap.41.1124
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2001First InP/InGaAs PNP HBT Grown by Metal Organic Chemical Vapor Deposition. 224-227.Full Text via DOI: 10.1109/iciprm.2001.929098
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2001III-V nitride-based two terminal devices for high power, high-frequency applications. 384-387.Full Text via DOI: 10.1109/ISDRS.2001.984523
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2001
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2001Low noise, high-speed InP/InGaAs HBTs. 188-191.
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2000Broadband AlGaN/GaN HEMT MMIC attenuators with high dynamic rangeFull Text via DOI: 10.1109/EUMA.2000.338705
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2000Nonlinear optical characterization of GaN layers grown by MOCVD on sapphireFull Text via DOI: 10.1557/s1092578300005056
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1999
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1999NPN-PNP InP HBT technology and applications to low power wireless systems. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. 11-20.
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1999Material properties of GaN in the context of electron devicesFull Text via DOI: 10.1557/s1092578300002209
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1998
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1997Noise in high speed devices. 11-16.
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1997InGaAs PIN diodes for high-isolation W-band monolithic integrated switching applications. 332-340.Full Text via DOI: 10.1109/cornel.1997.649374
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1997Low-frequency noise characterization of high- A nd low-reliability AlGaAs/GaAs single HBTs. 447-450.Full Text via DOI: 10.1109/ISCS.1998.711691
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1997Performance optimization of PNP InAlAs/InGaAs HBTs. 269-277.Full Text via DOI: 10.1109/cornel.1997.649367
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1997Photoluminescence characteristics of GaN layers grown on SOI substrates and relation to material properties. 307-312.Full Text via DOI: 10.1557/proc-482-307
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1996
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1996
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1995
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1994
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1994Raman scattering and x-ray diffraction studies of gallium nitride films grown on (100) gallium arsenide. 503-508.Full Text via DOI: 10.1557/proc-339-503
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1993A D-band monolithic fundamental oscillator using InP-based HEMTs. 10.Full Text via DOI: 10.1109/mcs.1993.247479
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1993A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer. 505-508.Full Text via DOI: 10.1109/iciprm.1993.380573
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19920.1μm MOVPE grown InAIAs/InGaAs hemts with above 150GHz operation capability. 18-21.Full Text via DOI: 10.1109/ICIPRM.1992.235700
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19921/f noise characteristics of InP/InGaAs heterojunction bipolar transistor's. 364-367.Full Text via DOI: 10.1109/ICIPRM.1992.235676
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1992A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs. 51-54.Full Text via DOI: 10.1109/GAAS.1992.247225
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1992A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP. 67-70.Full Text via DOI: 10.1109/GAAS.1992.247221
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1992Current status of heterojunction bipolar and high-electron mobility transistor technologies. 305-312.Full Text via DOI: 10.1016/0167-9317(92)90443-u
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1992Fmax-enhancement in cbe-grown InAIAs/InGaAs HEMT's using novel self-aligned offset-gate technology. 360-363.Full Text via DOI: 10.1109/ICIPRM.1992.235677
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1992High performance E/D-mode InAIAs/InGaAs HIGFET technology and integrated logic functions. 499-502.Full Text via DOI: 10.1109/ICIPRM.1992.235642
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1992Novel high-impedance photoconductive sampling probe for ultra-high speed circuit characterization. 19-22.Full Text via DOI: 10.1109/GAAS.1992.247232
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1991Invited paper: Millimeter-wave and optoelectronic applications of heterostructure integrated circuits. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. 450-466.Full Text via DOI: 10.1117/12.24516
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1991InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications. 242-245.Full Text via DOI: 10.1109/iciprm.1991.147465
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1991Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators. 161-166.Full Text via DOI: 10.1109/EUMA.1991.336427
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1991Millimeter-wave and optoelectronic applications of heterostructure integrated circuits. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. 450-466.
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1991Real time x-ray studies of semiconductor device structures. ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC SYSTEMS VII. 2-12.Full Text via DOI: 10.1117/12.47673
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1990
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1990
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1990InP based monolithic integrated HEMT amplifiers and their material sensitivity. 959-964.Full Text via DOI: 10.1109/euma.1990.336189
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1990Submicron double heterojunction strained InAlAs/InGaAs HEMTs: An experimental study of DC and microwave properties. 424-427.Full Text via DOI: 10.1109/iciprm.1990.203059
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1990p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures. 17-20.Full Text via DOI: 10.1109/iciprm.1990.202979
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1988Use of double heterojunction diodes in monolithic phase shifters. 1005-1010.Full Text via DOI: 10.1109/euma.1988.333941
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1987EFFECT OF CHANNEL STRAIN ON THE ELECTRICAL CHARACTERISTICS OF InGaAs/InAlAs HEMTs.. 427-430.Full Text via DOI: 10.1109/iedm.1987.191449
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Letter
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2002Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs. IEEE ELECTRON DEVICE LETTERS. 688-690.Full Text via DOI: 10.1109/LED.2002.805756
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Other Scholarly Work
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2021Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices (vol 68, pg 3034, 2021). IEEE TRANSACTIONS ON ELECTRON DEVICES. 4806-4806.Full Text via DOI: 10.1109/TED.2021.3092080 Web of Science: 000686761500106
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2011Erratum: Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes (Applied Surface Science (2010) 257 (388-392)). APPLIED SURFACE SCIENCE. 2413.Full Text via DOI: 10.1016/j.apsusc.2010.09.077
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2000Erratum: Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference (Appl. Phys. Lett. (2000) 76 (810) (10.1063/1.125592)). APPLIED PHYSICS LETTERS. 1479.Full Text via DOI: 10.1063/1.126069
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Review
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2014Electron field emission from nanostructured semiconductors under photo illumination. 543-562.Full Text via DOI: 10.3906/fiz-1407-1
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1999Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors. 1801-1808.Full Text via DOI: 10.1016/S0026-2714(99)00188-2
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Research
principal investigator on
- Wide-Bandgap (WBG) Semiconductor Workshop for Next Generation High-Frequency awarded by Army Research Office 2020 - 2025
- Field Emitter Robust Vacuum Integrated Nanoelectronics (FERVIN) awarded by Air Force Office of Scientific Research 2019 - 2025
- Variable Temperature High-Frequency Microprobe and Scanning Anode Field Emission System for Vacuum Integrated Nanoelectronics awarded by Air Force Office of Scientific Research 2021 - 2024
- EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors awarded by National Science Foundation 2020 - 2024
- Scanning Anode Field Emission and Variable Temperature High-Frequency Microprobe System for Vacuum Integrated Nanoelectronics awarded by U.S. Department of Defense 2019 - 2020
co-principal investigator on
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Grant
- IUCRC Phase I Florida International University:Center for High-Frequency Electronics and Circuits for Communication Systems (CHECCS) awarded by National Science Foundation 2021 - 2027
- Characterization Testbed for Research on mmWave Communication and Remote Sensing Systems awarded by U.S. Department of Defense 2024 - 2025
- Atomic Layer Deposition Tool for High Power Density and Reliability with Nanoscale Devices awarded by Army Research Office 2022 - 2025
- SEGAS: Slow-wave Enhanced Gain Amplifiers at Sub-Terahertz awarded by U.S. Department of Defense 2021 - 2022
- SII Planning: Center for Next Generation Wireless Spectrum Sharing awarded by National Science Foundation 2020 - 2022
