Characteristics of Strained In0.65Ga0.35As/ In0.52Al0.48As HEMT with Optimized Transport Parameters Article

Ng, GI, Hong, WP, Pavlidis, D et al. (1988). Characteristics of Strained In0.65Ga0.35As/ In0.52Al0.48As HEMT with Optimized Transport Parameters . IEEE ELECTRON DEVICE LETTERS, 9(9), 439-441. 10.1109/55.6938

cited authors

  • Ng, GI; Hong, WP; Pavlidis, D; Tutt, M; Bhattacharya, PK

authors

abstract

  • The dc and microwave performance of a strained Ino0.65 Ga0.35As/ln0.52Al0.48As HEMT is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic dc transconductance and cutoff frequency of 1.4-μm-long gate HEMT's are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35 x 107 to 1.55 x 107 cm/s at 300 K. © 1988 IEEE.

publication date

  • January 1, 1988

published in

Digital Object Identifier (DOI)

start page

  • 439

end page

  • 441

volume

  • 9

issue

  • 9