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IEEE ELECTRON DEVICE LETTERS
Journal
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Overview
publication venue for
Phonon Engineering to Modify Acoustic Phonon Velocity in Hexagonal Layered Superlattices
. 40:1175-1177.
2019
Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling Electrodes
. 34:1193-1195.
2013
HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts
. 30:478-480.
2009
RF Transmission Line Method for Wide-Bandgap Heterostructures
. 30:433-435.
2009
Lifetime extension of RF MEMS direct contact switches in hot switching operations by ball grid array dimple design
. 28:479-481.
2007
First demonstration of monolithic InP-based HBT amplifier with PNP active load
. 23:114-117.
2002
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
. 22:197-199.
2001
A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources
. 15:380-382.
1994
The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A1
0.48
As/In
0.53
Ga
0.47
As Heterostructure FET’s
. 12:360-362.
1991
Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
. 10:114-116.
1989
Monte Carlo Approach to Transient Analysis of HBT's with Different Collector Designs
. 10:55-57.
1989
Characteristics of Strained In0.65Ga0.35As/ In0.52Al0.48As HEMT with Optimized Transport Parameters
. 9:439-441.
1988
Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs
2002
Research
category
ENGINEERING, ELECTRICAL & ELECTRONIC
Category
Identifiers
International Standard Serial Number (ISSN)
0741-3106
Electronic International Standard Serial Number (EISSN)
1558-0563
Other
journal abbreviation
IEEE ELECTR DEVICE L