IEEE Electron Device Letters

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IEEE Electron Device Letters Journal

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2.69 kV/2.11 mΩ•cm² and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage. 44:13-16. 2023
2.0 kV/2.1 mΩ.cm² Lateral p-GaN/AIGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment. 43:693-696. 2022
Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors. 42:94-97. 2021
Phonon Engineering to Modify Acoustic Phonon Velocity in Hexagonal Layered Superlattices. 40:1175-1177. 2019
Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling Electrodes. 34:1193-1195. 2013
HfO₂-III-Nitride RF Switch With Capacitively Coupled Contacts. 30:478-480. 2009
RF Transmission Line Method for Wide-Bandgap Heterostructures. 30:433-435. 2009
Lifetime extension of RF MEMS direct contact switches in hot switching operations by ball grid array dimple design. 28:479-481. 2007
First demonstration of monolithic InP-based HBT amplifier with PNP active load. 23:114-117. 2002
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs. 22:197-199. 2001
A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources. 15:380-382. 1994
The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s. 12:360-362. 1991
Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design. 10:114-116. 1989
Monte Carlo Approach to Transient Analysis of HBT's with Different Collector Designs. 10:55-57. 1989
Characteristics of Strained In0.65Ga0.35As/ In0.52Al0.48As HEMT with Optimized Transport Parameters. 9:439-441. 1988
Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs 2002

International Standard Serial Number (ISSN)

0741-3106

Electronic International Standard Serial Number (EISSN)

1558-0563