A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources Article

Ng, GI, Pavlidis, D, Samelis, A et al. (1994). A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources . IEEE ELECTRON DEVICE LETTERS, 15(10), 380-382. 10.1109/55.320974

cited authors

  • Ng, GI; Pavlidis, D; Samelis, A; Pehlke, D; Garcia, JC; Hirtz, JP

authors

abstract

  • GaInP/GaAs Heterojunction Bipolar Transistors (HBT‘s) have been fabricated on epitaxial layers grown by Chemical Beam Epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V sources. DC results showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum dc current of 50 was obtained. A comparison of these results with HBT characteristics obtained using AsH3/PH3 or TBA/PH3 demonstrates the feasibility of replacing the toxic AsH3 and PH3 by less toxic TBA and TBP sources in the growth of GaInP/GaAs HBT's. ©1994 IEEE

publication date

  • January 1, 1994

published in

Digital Object Identifier (DOI)

start page

  • 380

end page

  • 382

volume

  • 15

issue

  • 10