Monte Carlo Approach to Transient Analysis of HBT's with Different Collector Designs Article

Ht, J, Tomizawa, K, Pavlidis, D. (1989). Monte Carlo Approach to Transient Analysis of HBT's with Different Collector Designs . IEEE ELECTRON DEVICE LETTERS, 10(2), 55-57. 10.1109/55.32427

cited authors

  • Ht, J; Tomizawa, K; Pavlidis, D

abstract

  • The transient analysis of heterojunction bipolar transistors (HBT’s) using the Monte Carlo technique is presented for the first time. Three HBT structures with conventional (A), inverted field (B), and undoped collector (C) were simulated. The transient behavior of the collector currents shows that the time constants T are 1.466, 0.722, and 0.863 ps at a collector current of 3.5 x 104 A/cm2 for devices A, B and C, respectively. This suggests that the inverted field structure may be the best choice for high-speed applications. © 1989 IEEE

publication date

  • January 1, 1989

published in

Digital Object Identifier (DOI)

start page

  • 55

end page

  • 57

volume

  • 10

issue

  • 2