2.69 kV/2.11 mΩ•cm2 and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage Article

Wei, Xing, Shen, Wenchao, Zhou, Xin et al. (2023). 2.69 kV/2.11 mΩ•cm2 and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage . IEEE ELECTRON DEVICE LETTERS, 44(1), 13-16. 10.1109/LED.2022.3220600

International Collaboration

cited authors

  • Wei, Xing; Shen, Wenchao; Zhou, Xin; Tang, Wenbo; Ma, Yongjian; Chen, Tiwei; Wang, Dawei; Fu, Houqiang; Zhang, Xiaodong; Lin, Wenkui; Yu, Guohao; Cai, Yong; Zhang, Baoshun

authors

publication date

  • January 1, 2023

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • Gallium nitride
  • KV
  • POWER DIODE
  • SCHOTTKY-BARRIER DIODES
  • SILICON
  • Science & Technology
  • Technology
  • high voltage
  • hybrid anode diode
  • p-GaN stripe array gate
  • power electronics

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 13

end page

  • 16

volume

  • 44

issue

  • 1