Ng, GI, Pavlidis, D, Tutt, M
et al. (1989). Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
.
IEEE ELECTRON DEVICE LETTERS, 10(3), 114-116. 10.1109/55.31686
Ng, GI, Pavlidis, D, Tutt, M et al. (1989). Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
. IEEE ELECTRON DEVICE LETTERS, 10(3), 114-116. 10.1109/55.31686