Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design Article

Ng, GI, Pavlidis, D, Tutt, M et al. (1989). Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design . IEEE ELECTRON DEVICE LETTERS, 10(3), 114-116. 10.1109/55.31686

cited authors

  • Ng, GI; Pavlidis, D; Tutt, M; Oh, J-E; Bhattacharya, PK

authors

publication date

  • March 1, 1989

published in

keywords

  • 40 Engineering
  • 4009 Electronics, Sensors and Digital Hardware

Digital Object Identifier (DOI)

publisher

  • Institute of Electrical and Electronics Engineers (IEEE)

start page

  • 114

end page

  • 116

volume

  • 10

issue

  • 3