2.0 kV/2.1 mΩ.cm2 Lateral p-GaN/AIGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment Article

Wei, Xing, Zhang, Xiaodong, Tang, Wenxin et al. (2022). 2.0 kV/2.1 mΩ.cm2 Lateral p-GaN/AIGaN/GaN Hybrid Anode Diodes With Hydrogen Plasma Treatment . IEEE ELECTRON DEVICE LETTERS, 43(5), 693-696. 10.1109/LED.2022.3159240

cited authors

  • Wei, Xing; Zhang, Xiaodong; Tang, Wenxin; Liu, Weining; Zhou, Xin; Tang, Wenbo; Ma, Yongjian; Chen, Tiwei; Huang, Xingjie; Qian, Hong; Yu, Guohao; Zhang, Xuan; Shen, Wenchao; Fan, Yaming; Zeng, Zhongming; Wang, Hanbin; Cai, Yong; Zhang, Baoshun

authors

publication date

  • May 1, 2022

published in

keywords

  • BLOCKING
  • Engineering
  • Engineering, Electrical & Electronic
  • Gallium nitride
  • RECTIFIER
  • SCHOTTKY-BARRIER DIODES
  • SILICON
  • Science & Technology
  • Technology
  • VOLTAGE
  • high voltage
  • hybrid anode diode
  • hydrogen plasma treatment
  • power electronics

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 693

end page

  • 696

volume

  • 43

issue

  • 5