The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s
Article
Chan, YJ, Pavlidis, D, Ng, GI. (1991). The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s
. IEEE ELECTRON DEVICE LETTERS, 12(7), 360-362. 10.1109/55.103607
Chan, YJ, Pavlidis, D, Ng, GI. (1991). The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s
. IEEE ELECTRON DEVICE LETTERS, 12(7), 360-362. 10.1109/55.103607