The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s Article

Chan, YJ, Pavlidis, D, Ng, GI. (1991). The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In 0.52 A10.48 As/In0.53 Ga0.47 As Heterostructure FET’s . IEEE ELECTRON DEVICE LETTERS, 12(7), 360-362. 10.1109/55.103607

cited authors

  • Chan, YJ; Pavlidis, D; Ng, GI

abstract

  • Sidegating effects in InAlAs/InGaAs heterostructure FET’s (HFET’s) are experimentally investigated. HFET’s with the gate air bridge over the mesa edge can maintain 99% of the drain-source (Ids) current level at sidegate voltages (Vsg) extending up to -30 V, while the non-air-bridge configuration of HFET’s shows a 30% drop of Ids at the same Vsg. This significant discrepancy of sidegating effect is attributed to depletion region modulation at the mesa edge below the gate feeder. By lifting the gate feeder above the mesa step, sidegating is reduced, which suggests the channel/substrate trap effects are negligibly small. © 1991 IEEE

publication date

  • January 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 360

end page

  • 362

volume

  • 12

issue

  • 7