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HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts Article

Koudymov, Alexei, Pala, Nezih, Tokranov, V et al. (2009). HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts . IEEE ELECTRON DEVICE LETTERS, 30(5), 478-480. 10.1109/LED.2009.2017284

Industry Collaboration

cited authors

  • Koudymov, Alexei; Pala, Nezih; Tokranov, V; Oktyabrsky, Serge; Gaevski, Mikhail; Jain, R; Yang, J; Hu, X; Shur, Michael; Gaska, Remis; Simin, Grigory

authors

publication date

  • May 1, 2009

published in

keywords

  • AlGaN/GaN
  • Engineering
  • Engineering, Electrical & Electronic
  • HEMTS
  • HfO2
  • OXIDE
  • PASSIVATION
  • Science & Technology
  • Technology
  • capacitive coupling
  • high-k dielectric
  • radio-frequency (RF) switch

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 478

end page

  • 480

volume

  • 30

issue

  • 5