InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
Article
Ziegler, V, Gäessler, C, Woelk, C et al. (2000). InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
. 341-344. 10.1109/ICIPRM.2000.850302
Ziegler, V, Gäessler, C, Woelk, C et al. (2000). InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
. 341-344. 10.1109/ICIPRM.2000.850302
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.