InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems Article

Ziegler, V, Gäessler, C, Woelk, C et al. (2000). InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems . 341-344. 10.1109/ICIPRM.2000.850302

cited authors

  • Ziegler, V; Gäessler, C; Woelk, C; Berlec, FJ; Deufel, R; Berg, M; Dickmann, J; Schumacher, H; Alekseev, E; Pavlidis, D

authors

abstract

  • In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.

publication date

  • January 1, 2000

Digital Object Identifier (DOI)

start page

  • 341

end page

  • 344