A miniaturized W-band dual-gate HEMT mixer has been demonstrated using InAlAS/ InGaAs HEMT technology. The circuit provides on-chip RF/LO coupling and integrates the HEMT, RF/LO/IF matching circuits and bias lines on a 1 mm × 1 mm chip. The dual-gate mixer showed a conversion loss of 3 dB with 5 dBm LO power and had an RF return loss better than 10 dB over a wide range of frequencies (87 GHz - 100 GHz). The LO-to-RF isolation was better than 17 dB for W-band operation.
