Material and device properties of MOCVD grown InAlAs InGaAs HEMTs Article

Pavlidis, D, Hong, K, Hein, K et al. (1995). Material and device properties of MOCVD grown InAlAs InGaAs HEMTs . SOLID-STATE ELECTRONICS, 38(9), 1697-1701. 10.1016/0038-1101(95)00045-U

cited authors

  • Pavlidis, D; Hong, K; Hein, K; Kwon, Y

authors

abstract

  • A systematic study of MOCVD grown InP based heterostructures and their application in HEMT technology is reported. The heterostructures are realized by Metal-Organic-Chemical-Vapor-Deposition (MOCVD) which is a well suited for production growth technique. The impact of growth temperature and AsH3 flow rates on the material properties was investigated and optimized. To improve the device performance even further, Fe-doped InAlAs is also studied. By optimizing the growth conditions of InAlAs InGaAs heterostructure, we demonstrates high performance 1 μm gate length InAlAs InGaAs HEMTs which show ft of 60 GHz and fmax of 120 GHz. By applying the same submicron technology on MOCVD HEMT layers grown by a commercial vendor as on Molecular-Beam-Epitaxy grown layers, we could demonstrate equivalent ft (180 GHz) and fmax (220 GHz) performance. © 1995.

publication date

  • January 1, 1995

published in

Digital Object Identifier (DOI)

start page

  • 1697

end page

  • 1701

volume

  • 38

issue

  • 9