Solid-State Electronics

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Solid-State Electronics Journal

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Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure. 158:1-10. 2019
Field controlled RF Graphene FETs with improved high frequency performance. 95:36-41. 2014
Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs. 52:1217-1220. 2008
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET. 50:282-286. 2006
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects. 49:1352-1360. 2005
Engineering strained silicon on insulator wafers with the Smart Cut™ technology. 48:1285-1296. 2004
Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors. 47:1099-1104. 2003
Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors. 46:711-714. 2002
A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT. 46:249-253. 2002
Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology. 44:2059-2067. 2000
Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics. 44:1847-1852. 2000
Large-signal microwave performance of GaN-based NDR diode oscillators. 44:941-947. 2000
Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs. 44:739-746. 2000
DC and high-frequency performance of AlGaN/GaN heterojunction bipolar transistors. 44:245-252. 2000
Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications. 43:1429-1436. 1999
InP-based complementary HBT amplifiers for use in communication systems. 43:1507-1512. 1999
InP-based millimeter-wave PIN diodes for switching and phase-shifting applications. 41:1635-1639. 1997
Material and device properties of MOCVD grown InAlAs InGaAs HEMTs. 38:1697-1701. 1995
TRANSCONDUCTANCES OF THE LONG-CHANNEL SILICON-ON-INSULATOR MOSFET. 36:631-637. 1993
LONG-CHANNEL SILICON-ON-INSULATOR MOSFET THEORY. 35:1291-1298. 1992
High Tc superconductors for digital system interconnections. 32:947-959. 1989
Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing 2022
A GENERALIZED-MODEL FOR A 2-TERMINAL DEVICE AND ITS APPLICATIONS TO PARAMETER EXTRACTION 1995

International Standard Serial Number (ISSN)

0038-1101

Electronic International Standard Serial Number (EISSN)

1879-2405