Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology Article

Park, JW, Mohammadi, S, Pavlidis, D et al. (2000). Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology . SOLID-STATE ELECTRONICS, 44(11), 2059-2067. 10.1016/S0038-1101(00)00074-5

cited authors

  • Park, JW; Mohammadi, S; Pavlidis, D; Dua, C; Guyaux, JL; Garcia, JC

authors

abstract

  • Monolithic broadband transimpedance amplifiers were developed using chemical beam epitaxy (CBE) based GaInP/GaAs HBT technology. The developed HBTs showed a cut-off frequency (fT) of 60 GHz and a maximum oscillation frequency (fmax) of 100 GHz using laterally etched undercut (LEU) technology. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dBΩ. The small and large signal characteristics of two transimpedance amplifier designs with similar gain were investigated. The cascode design when compared to the common-emitter design, provided a higher bandwidth and a more open eye diagram, as well as less sensitive to input power gain and eye diagram pattern.

publication date

  • November 1, 2000

published in

Digital Object Identifier (DOI)

start page

  • 2059

end page

  • 2067

volume

  • 44

issue

  • 11