Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics Article

Park, JW, Mohammadi, S, Pavlidis, D. (2000). Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics . SOLID-STATE ELECTRONICS, 44(10), 1847-1852. 10.1016/S0038-1101(00)00030-7

cited authors

  • Park, JW; Mohammadi, S; Pavlidis, D

authors

abstract

  • The collector-emitter offset voltage of GaInP/GaAs HBTs grown by chemical-beam epitaxy with reduced toxicity precursors is investigated for Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector contact metals. The offset voltage for HBTs with Ti/Pt/Au collector metal is increased by 0.26 V compared to Ni/Ge/Au/Ti/Au due to the 0.26 eV barrier existing between the n-GaAs subcollector and the Ti/Pt/Au contact metal. Other parameters affected by the collector contact barrier and impacting transistor performance include DC gain, microwave and power performance.

publication date

  • October 1, 2000

published in

Digital Object Identifier (DOI)

start page

  • 1847

end page

  • 1852

volume

  • 44

issue

  • 10