InP-based millimeter-wave PIN diodes for switching and phase-shifting applications Article

Pavlidis, D, Alekseev, E, Hong, K et al. (1997). InP-based millimeter-wave PIN diodes for switching and phase-shifting applications . SOLID-STATE ELECTRONICS, 41(10), 1635-1639. 10.1016/S0038-1101(97)00170-6

cited authors

  • Pavlidis, D; Alekseev, E; Hong, K; Cui, D

authors

abstract

  • InP-based PIN design, technology and circuit implementation were addressed and successfully applied to millimeter-wave MMIC switches and phase shifters. A wet etchant based via technology was developed and applied to InP MMIC fabrication. MOCVD and MBE material growth was used for PIN realization and PIN specific growth optimization is discussed. Experimentally determined electrical characteristics and good performance is presented for a variety of InP-based PIN MMICs including coplanar and microstrip Ka-band SPST switches, W-band microstrip SPST switches and a 90-degree phase shifter. © 1997 Elsevier Science Ltd.

publication date

  • January 1, 1997

published in

Digital Object Identifier (DOI)

start page

  • 1635

end page

  • 1639

volume

  • 41

issue

  • 10