Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing Conference

Amor, S, Kilchytska, V, Tounsi, F et al. (2022). Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing . SOLID-STATE ELECTRONICS, 194 10.1016/j.sse.2022.108300

Open Access International Collaboration

cited authors

  • Amor, S; Kilchytska, V; Tounsi, F; Andre, N; Machhout, M; Francis, LA; Flandre, D

authors

date/time interval

  • May 18, 2022 -

publication date

  • August 1, 2022

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • Flicker noise
  • Gamma irradiation
  • In-Situ Thermal Annealing
  • MODEL
  • MOSFET
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • RTN noise
  • Radiation-induced defects
  • Science & Technology
  • Silicon-on-Insulator (SOI)
  • Technology
  • Total Ionizing Dose (TID)

Location

  • ITALY, Udine

Digital Object Identifier (DOI)

Conference

  • 8th Joint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

publisher

  • PERGAMON-ELSEVIER SCIENCE LTD

volume

  • 194