Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications Article

Hsu, SSH, Bayraktaroglu, B, Pavlidis, D. (1999). Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications . SOLID-STATE ELECTRONICS, 43(8), 1429-1436. 10.1016/S0038-1101(99)00085-4

cited authors

  • Hsu, SSH; Bayraktaroglu, B; Pavlidis, D

authors

abstract

  • Conventional and thermally-stable cascode HBT (TSC-HBT) were fabricated using a self-aligned emitter-base process on MOCVD-grown wafers. The pronounced self-heating effect of conventional AlGaAs/GaAs HBT was reduced dramatically by the cascode design approach. The DC, small and large-signal characteristics of conventional common-emitter (CE) and TSC-HBTs were compared and a direct assessment of the new HBT design is provided.

publication date

  • January 1, 1999

published in

Digital Object Identifier (DOI)

start page

  • 1429

end page

  • 1436

volume

  • 43

issue

  • 8