Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors
Article
Pala, N, Rumyantsev, SL, Shur, MS et al. (2002). Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors
. SOLID-STATE ELECTRONICS, 46(5), 711-714. 10.1016/S0038-1101(01)00302-1
Pala, N, Rumyantsev, SL, Shur, MS et al. (2002). Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors
. SOLID-STATE ELECTRONICS, 46(5), 711-714. 10.1016/S0038-1101(01)00302-1