Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Article

Pala, N, Rumyantsev, SL, Shur, MS et al. (2002). Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors . SOLID-STATE ELECTRONICS, 46(5), 711-714. 10.1016/S0038-1101(01)00302-1

Industry Collaboration

cited authors

  • Pala, N; Rumyantsev, SL; Shur, MS; Hu, X; Tarakji, A; Gaska, R; Khan, MA; Simin, G; Yang, J

authors

publication date

  • May 1, 2002

webpage

published in

keywords

  • COLLAPSE
  • Engineering
  • Engineering, Electrical & Electronic
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

publisher

  • PERGAMON-ELSEVIER SCIENCE LTD

start page

  • 711

end page

  • 714

volume

  • 46

issue

  • 5