InP-based complementary HBT amplifiers for use in communication systems
Article
Sawdai, D, Pavlidis, D. (1999). InP-based complementary HBT amplifiers for use in communication systems
. SOLID-STATE ELECTRONICS, 43(8), 1507-1512. 10.1016/S0038-1101(99)00096-9
Sawdai, D, Pavlidis, D. (1999). InP-based complementary HBT amplifiers for use in communication systems
. SOLID-STATE ELECTRONICS, 43(8), 1507-1512. 10.1016/S0038-1101(99)00096-9
This paper addresses a method to improve the linearity characteristics of power amplifiers by developing a PNP HBT technology and combining the PNP HBTs with NPN HBTs in a push-pull amplifier. InP-based PNP HBTs were fabricated with hfe > 30, BVECO = 5.6 V, and fT and fmax of 11 and 31 GHz, respectively, which is the best reported for InAlAs/InGaAs PNP HBTs. Common-collector push-pull amplifiers were simulated using these HBTs, demonstrating an improvement of 14 dB in second harmonic content under Class B operation. A common-emitter push-pull amplifier fabricated with the same HBTs demonstrated the best IM3 (by approx. 7 dBc) and smaller second harmonic content (by approx. 9 dBc) compared with NPN HBTs. In addition, the circuit produced 1.32 dBm more output power than the NPN HBT alone at 1 dB of gain compression.
