A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT Article

Cui, D, Hsu, S, Pavlidis, D et al. (2002). A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT . SOLID-STATE ELECTRONICS, 46(2), 249-253. 10.1016/S0038-1101(01)00293-3

cited authors

  • Cui, D; Hsu, S; Pavlidis, D; Chin, P; Block, T

authors

abstract

  • A Ka-band oscillator has been designed, fabricated and tested using InAlAs/InGaAs HBTs. Coplanar waveguide technology has been employed to improve the Q-factor of the circuit. An output power of 2.6 dBm with DC to RF conversion efficiency of 7.8% was measured at 31.7 GHz. Low phase noise of -87 and -112 dBc/Hz were achieved at an offset frequency of 100 kHz and 1 MHz respectively. These low phase noise values can be attributed to the low 1/f noise of the InAlAs/InGaAs HBT devices and the coplanar design used for the circuit. © 2002 Elsevier Science Ltd. All rights reserved.

publication date

  • February 1, 2002

published in

Digital Object Identifier (DOI)

start page

  • 249

end page

  • 253

volume

  • 46

issue

  • 2