Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
Article
Pala, N, Hu, X, Deng, J et al. (2008). Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
. SOLID-STATE ELECTRONICS, 52(8), 1217-1220. 10.1016/j.sse.2008.05.010
Pala, N, Hu, X, Deng, J et al. (2008). Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
. SOLID-STATE ELECTRONICS, 52(8), 1217-1220. 10.1016/j.sse.2008.05.010