Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Article

Pala, N, Hu, X, Deng, J et al. (2008). Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs . SOLID-STATE ELECTRONICS, 52(8), 1217-1220. 10.1016/j.sse.2008.05.010

Industry Collaboration

cited authors

  • Pala, N; Hu, X; Deng, J; Yang, J; Gaska, R; Yang, Z; Koudymov, A; Shur, MS; Simin, G

authors

publication date

  • August 1, 2008

webpage

published in

keywords

  • ALGAN/GAN
  • DELAY
  • ELECTRON-MOBILITY TRANSISTORS
  • Engineering
  • Engineering, Electrical & Electronic
  • GAIN CUTOFF FREQUENCY
  • HFETS
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology
  • VELOCITY
  • electric fields
  • gallium nitride
  • high electron mobility transistor (HEMT)

Digital Object Identifier (DOI)

publisher

  • PERGAMON-ELSEVIER SCIENCE LTD

start page

  • 1217

end page

  • 1220

volume

  • 52

issue

  • 8