Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Article

Pala, N, Rumyantsev, S, Shur, M et al. (2003). Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors . SOLID-STATE ELECTRONICS, 47(6), 1099-1104. 10.1016/S0038-1101(02)00475-6

Industry Collaboration

cited authors

  • Pala, N; Rumyantsev, S; Shur, M; Gaska, R; Hu, X; Yang, J; Simin, G; Khan, MA

authors

publication date

  • June 1, 2003

webpage

published in

keywords

  • 1/F NOISE
  • ALGAN-GAN HETEROSTRUCTURES
  • BAND-GAP
  • DEPENDENCE
  • DRIFT MOBILITY
  • ELECTRON-MOBILITY
  • Engineering
  • Engineering, Electrical & Electronic
  • INN
  • N-GAN
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • SEMICONDUCTOR
  • Science & Technology
  • Technology
  • activation energy
  • generation-recombination noise
  • l/f noise
  • low frequency noise

Digital Object Identifier (DOI)

publisher

  • PERGAMON-ELSEVIER SCIENCE LTD

start page

  • 1099

end page

  • 1104

volume

  • 47

issue

  • 6