Transient and steady-state Monte-Carlo simulation of the effects of junction grading on carrier transport in InAlAs/InGaAs HBT's Conference

Hu, J, Pavlidis, D, Tomizawa, K. (1990). Transient and steady-state Monte-Carlo simulation of the effects of junction grading on carrier transport in InAlAs/InGaAs HBT's . 439-442.

cited authors

  • Hu, J; Pavlidis, D; Tomizawa, K

authors

abstract

  • Various Al composition gradings (x0) at the emitter/base junction of an InAlAs/InGaAs HBT (heterojunction bipolar transistor) are considered and their effects on carrier transport are studied using a self-consistent Monte Carlo technique. Electron transit time, velocity, and energy distribution are examined for this purpose. The shortest base-collector transit time (1.34 ps) and the highest average velocity (3.1 × 107 cm/s) are found for a design with intermediate grading (x0 = 0.5 approximately 0.6). The study of the transient collector current and cutoff frequency characteristics shows similar results, i.e., improved device speed and frequency of operation with intermediate grading E/B junctions.

publication date

  • December 1, 1990

start page

  • 439

end page

  • 442