Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52A10.48As/InxGa1-x, As HEMT’s Article

Ng, GI, Pavlidis, D. (1991). Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52A10.48As/InxGa1-x, As HEMT’s . IEEE TRANSACTIONS ON ELECTRON DEVICES, 38(4), 862-870. 10.1109/16.75216

cited authors

  • Ng, GI; Pavlidis, D

authors

abstract

  • The low-frequency characteristics of InAlAs/InxGa1_x HEMT’s are studied and trap densities are evaluated. The HEMT’s show transconductance and output resistance dispersion which is smallest for 60% indium (In) content and largest for 53% In. The maximum dispersion for the 53% In sample is 6% for gm, and ~13.3% for Rd, corresponding therefore to lower values than observed in MESFET‘s. The Rd. dispersion characteristics are weaker than in AlGaAs/GaAs HEMT’s and manifest themselves primarily up to 100 kHz. An analysis of the dispersion results indicate that, unlike MESFET’s, the channel region under the gate rather than the access regions are responsible for the dispersion. Interface state densities were extracted by the ac conductance method and were found to follow the same trend as the gm, and Rds dispersion; namely, maximum values (2.69 x 1012 cm-2/eV-1) for 53% In and minimum (1.98 x 1012 cm-2/eV-1) for 60% In. © 1991 IEEE

publication date

  • January 1, 1991

published in

Digital Object Identifier (DOI)

start page

  • 862

end page

  • 870

volume

  • 38

issue

  • 4