IEEE TRANSACTIONS ON ELECTRON DEVICES

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IEEE TRANSACTIONS ON ELECTRON DEVICES Journal

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Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices. 68:3034-3039. 2021
An Aging-Resistant NAND Flash Memory Physical Unclonable Function. 67:937-943. 2020
A Study of Velocity-Tapered Slow Wave Structures for High-Efficiency Backward Wave Oscillators. 65:3054-3060. 2018
Backward-Wave Oscillator Operating in Low Magnetic Fields Using a Hybrid-TE11 Mode. 64:3863-3869. 2017
Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model. 63:990-996. 2016
First observation of bias oscillations in GaN Gunn diodes on GaN substrate. 55:1563-1567. 2008
Investigation of the impact of Al mole-fraction on the consequences of RF stress on Alx Ga1-x N/GaN MODFETs. 52:1933-1939. 2005
A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors. 50:1974-1982. 2003
Superconducting versus optical interconnections. 36:2629. 2003
Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers. 35:2435. 2002
Comparison of DC high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition. 49:725-732. 2002
Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors. 48:1297-1303. 2001
Noise characteristics of GaN-based IMPATTs. 48:1473-1475. 2001
DC and high-frequency characteristics of GaN-based IMPATTs. 48:820-822. 2001
Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors. 48:530-534. 2001
Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs powerHBTs. 47:677-686. 2000
Generation-recombination noise in nongated and gated AlxGa1-xAs/GaAs TEGFETs in the range 1 Hz to 1 MHz. 47:2045-2053. 2000
A nonfundamental theory of low-frequency noise in semiconductor devices. 47:2009-2017. 2000
Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication. 46:1302-1311. 1999
InGaAs-schottky contacts made by in situ plated and evaporated pt-an analysis based on DC and noise characteristics. 45:349-360. 1998
MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics phil marsh. 44:1066-1075. 1997
InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology. 44:1052-1059. 1997
Delay time analysis of submicron InP-based HEMT's. 43:228-237. 1996
Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers. 43:2053-2061. 1996
Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures. 43:2046-2052. 1996
Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In0.7Ga0.3As/InA1As HEMT's. 42:1017-1025. 1995
Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors. 42:219-229. 1995
Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations. 41:637-642. 1994
Optimization of MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications. 41:1489-1497. 1994
Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors. 41:1347-1350. 1994
Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors. 40:2-8. 1993
Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs. 39:2711-2719. 1992
Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52Al0.48As/InxGal-xAs HEMT’s. 39:523-532. 1992
Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors. 39:1273-1281. 1992
Single and Dual p-Doped Channel In0.52A10.48As/InxGa1-xAs (x = 0.53, 0.65) FET’s and the Role of Doping. 39:466-472. 1992
Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52A10.48As/InxGa1-x, As HEMT’s. 38:862-870. 1991
In0.52A10.48As/InxGa1-xAs (0.53 ≤ x ≤ 0.70) lattice-matched and strained heterostructure insulated-gate FET’s. 38:1999-2005. 1991
Monolithically Integrated InP-Based Front-End Photoreceivers. 38:1324-1333. 1991
Theoretical Analysis of HEMT Breakdown Dependence on Device Design Parameters. 38:213-221. 1991
Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures. 37:2141-2147. 1990
Transport Equation Approach For Heterojunction Bipolar Transistors. 37:519-529. 1990
Superconducting versus optical interconnections. 36:2629. 1989
Design and Experimental Characteristics of Strained In0.52Alo.48As/InxGa1_x As (x > 0.53) HEMT's. 36:2249-2259. 1989
Studies of the DC, Low-Frequency, and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMT's. 36:2288-2298. 1989
Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching. 36:2138-2145. 1989
VIB-3 Superconducting versus Optical Interconnections. 36:2629. 1989
An Analytical Approach to the Capacitance-Voltage Characteristics of Double-Heterojunction HEMT’s. 35:1223-1231. 1988
An Investigation of the Power Characteristics and Saturation Mechanisms in HEMT’s and MESFET’s. 35:1197-1206. 1988
IIB-5 Theoretical and Experimental Studies of Monolithically Integrated Pseudomorphic InGaAs/AlGaAs MODFET-APD Photoreceivers. 35:2435. 1988
Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices (vol 68, pg 3034, 2021) 2021

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ENGINEERING, ELECTRICAL & ELECTRONIC Category
PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0018-9383