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IEEE TRANSACTIONS ON ELECTRON DEVICES
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publication venue for
Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices
. 68:3034-3039.
2021
An Aging-Resistant NAND Flash Memory Physical Unclonable Function
. 67:937-943.
2020
A Study of Velocity-Tapered Slow Wave Structures for High-Efficiency Backward Wave Oscillators
. 65:3054-3060.
2018
Backward-Wave Oscillator Operating in Low Magnetic Fields Using a Hybrid-TE11 Mode
. 64:3863-3869.
2017
Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model
. 63:990-996.
2016
First observation of bias oscillations in GaN Gunn diodes on GaN substrate
. 55:1563-1567.
2008
Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al
x
Ga
1-x
N/GaN MODFETs
. 52:1933-1939.
2005
A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors
. 50:1974-1982.
2003
Superconducting versus optical interconnections
. 36:2629.
2003
Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers
. 35:2435.
2002
Comparison of DC high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition
. 49:725-732.
2002
Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors
. 48:1297-1303.
2001
Noise characteristics of GaN-based IMPATTs
. 48:1473-1475.
2001
DC and high-frequency characteristics of GaN-based IMPATTs
. 48:820-822.
2001
Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors
. 48:530-534.
2001
Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs powerHBTs
. 47:677-686.
2000
Generation-recombination noise in nongated and gated AlxGa1-xAs/GaAs TEGFETs in the range 1 Hz to 1 MHz
. 47:2045-2053.
2000
A nonfundamental theory of low-frequency noise in semiconductor devices
. 47:2009-2017.
2000
Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication
. 46:1302-1311.
1999
InGaAs-schottky contacts made by in situ plated and evaporated pt-an analysis based on DC and noise characteristics
. 45:349-360.
1998
MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics phil marsh
. 44:1066-1075.
1997
InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology
. 44:1052-1059.
1997
Delay time analysis of submicron InP-based HEMT's
. 43:228-237.
1996
Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers
. 43:2053-2061.
1996
Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures
. 43:2046-2052.
1996
Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In
0.7
Ga
0.3
As/InA1As HEMT's
. 42:1017-1025.
1995
Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors
. 42:219-229.
1995
Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations
. 41:637-642.
1994
Optimization of MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications
. 41:1489-1497.
1994
Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors
. 41:1347-1350.
1994
Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors
. 40:2-8.
1993
Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs
. 39:2711-2719.
1992
Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In
0.52
Al
0.48
As/In
x
Ga
l-x
As HEMT’s
. 39:523-532.
1992
Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors
. 39:1273-1281.
1992
Single and Dual p-Doped Channel In
0.52
A1
0.48
As/In
x
Ga
1
-
x
As (x = 0.53, 0.65) FET’s and the Role of Doping
. 39:466-472.
1992
Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In
0.52
A1
0.48
As/In
x
Ga
1-x
, As HEMT’s
. 38:862-870.
1991
In
0.52
A1
0.48
As/In
x
Ga
1-x
As (0.53 ≤ x ≤ 0.70) lattice-matched and strained heterostructure insulated-gate FET’s
. 38:1999-2005.
1991
Monolithically Integrated InP-Based Front-End Photoreceivers
. 38:1324-1333.
1991
Theoretical Analysis of HEMT Breakdown Dependence on Device Design Parameters
. 38:213-221.
1991
Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures
. 37:2141-2147.
1990
Transport Equation Approach For Heterojunction Bipolar Transistors
. 37:519-529.
1990
Superconducting versus optical interconnections
. 36:2629.
1989
Design and Experimental Characteristics of Strained In0.52Alo.48As/InxGa1_x As (x > 0.53) HEMT's
. 36:2249-2259.
1989
Studies of the DC, Low-Frequency, and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMT's
. 36:2288-2298.
1989
Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching
. 36:2138-2145.
1989
VIB-3 Superconducting versus Optical Interconnections
. 36:2629.
1989
An Analytical Approach to the Capacitance-Voltage Characteristics of Double-Heterojunction HEMT’s
. 35:1223-1231.
1988
An Investigation of the Power Characteristics and Saturation Mechanisms in HEMT’s and MESFET’s
. 35:1197-1206.
1988
IIB-5 Theoretical and Experimental Studies of Monolithically Integrated Pseudomorphic InGaAs/AlGaAs MODFET-APD Photoreceivers
. 35:2435.
1988
Electrical Characteristics of Vertical GaN Nanowire Vacuum Field Emitter Devices (vol 68, pg 3034, 2021)
2021
Research
category
ENGINEERING, ELECTRICAL & ELECTRONIC
Category
PHYSICS, APPLIED
Category
Identifiers
International Standard Serial Number (ISSN)
0018-9383