Optimization of MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications Article

Hong, K, Marsh, PF, Pavlidis, D et al. (1994). Optimization of MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications . IEEE TRANSACTIONS ON ELECTRON DEVICES, 41(9), 1489-1497. 10.1109/16.310098

cited authors

  • Hong, K; Marsh, PF; Pavlidis, D; Hong, CH

authors

abstract

  • The feasibility of InP-based planar heteroepitaxial diodes for terahertz multiplier and mixer applications is explored. A variety of InxAl1-xAs/In0.53Ga0.47As (x = 0.52.0.4) diodes have been grown using LP-MOVPE and allows systematic characterization of the effects of barrier thickness, In As mole fraction and active layer thickness on the diode DC and RF performance. A new fabrication technology is developed for planar diodes using dielectric-free air-bridged anode fingers and trench isolation to minimize series resistance and parasitic capacitance. A qualitative model is suggested to explain the forward current conduction mechanism of the reported diodes. The control of forward current conduction and reverse leakage by epitaxial design together with the demonstrated figure-of-merit cutoff frequency of 2.6 THz make the diodes suitable for multiplier and mixer terahertz applications. © 1994, IEEE. All rights reserved.

publication date

  • January 1, 1994

published in

Digital Object Identifier (DOI)

start page

  • 1489

end page

  • 1497

volume

  • 41

issue

  • 9