Generation-recombination noise in nongated and gated AlxGa1-xAs/GaAs TEGFETs in the range 1 Hz to 1 MHz Article

Chen, YP, VanVliet, CM, Larkins, GL et al. (2000). Generation-recombination noise in nongated and gated AlxGa1-xAs/GaAs TEGFETs in the range 1 Hz to 1 MHz . IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2045-2053. 10.1109/16.877165

keywords

  • DEVICES
  • Engineering
  • Engineering, Electrical & Electronic
  • MODFETs
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • Technology
  • charge carrier processes
  • noise

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 2045

end page

  • 2053

volume

  • 47

issue

  • 11