Design and Experimental Characteristics of Strained In0.52Alo.48As/InxGa1_x As (x > 0.53) HEMT's Article

Ng, GI, Pavlidis, D, Singh, J et al. (1989). Design and Experimental Characteristics of Strained In0.52Alo.48As/InxGa1_x As (x > 0.53) HEMT's . IEEE TRANSACTIONS ON ELECTRON DEVICES, 36(10), 2249-2259. 10.1109/16.40907

cited authors

  • Ng, GI; Pavlidis, D; Singh, J; Chau, HF; Jaffe, M

authors

abstract

  • Strained In0.52A10.48, As/InxGa1-x, As (x > 0.53) HEMT's are studied theoretically and experimentally. A device design proce-dure is reported that is based on bandstructure and charge control self-consistent calculations. It predicts the sheet carrier density and electron confinement as a function of doping and thickness of layers. The dc performance at 300 K is presented. Wafer statistics demonstrate improvement of device characteristics with excess indium in the channel (gm, ing= 500 and 700 mS/mm for x = 0.60 and O.65) Microwave characterization shows the fr improvement (fr = 40 and 45 GHz for x = 0.60 and 0.65, respectively) and the Rdslimitations of the 1-μm-long-gate HEMT's. © 1989 IEEE

publication date

  • January 1, 1989

published in

Digital Object Identifier (DOI)

start page

  • 2249

end page

  • 2259

volume

  • 36

issue

  • 10