Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers Article

Samelis, A, Pavlidis, D, Chandrasekhar, S et al. (1996). Large-signal characteristics of inp-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers . IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(12), 2053-2061. 10.1109/16.544374

cited authors

  • Samelis, A; Pavlidis, D; Chandrasekhar, S; Lunardi, LM; Rios, J

authors

abstract

  • A large-signal model for InP/InGaAs-based single HBT's incorporating soft-breakdown effects to the LIBRA Gummel-Poon (GP) model is developed and its validity is established from DC to microwave frequencies and over a wide range of input excitation levels. The large-signal characteristics of a cascode InP-based transimpedance optoelectronic preamplifier employing such devices are studied. Gain compression for the preamplifier was found to take place at an input power level of -20 dBm. Input power excitation varying from -65 to -5 dBm results in a degradation of the amplifier transimpedance gain of the order of 3 dBΩ. Experimental and theoretical characteristics are presented for the InP-based HBT's and transimpedance amplifier. Self-biasing effects are suggested as possible origin of the transimpedance variations with input power. © 1996 IEEE.

publication date

  • December 1, 1996

published in

Digital Object Identifier (DOI)

start page

  • 2053

end page

  • 2061

volume

  • 43

issue

  • 12