Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations Article

Chan, Yi-Jen, Pavlidis, D. (1994). Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations . IEEE TRANSACTIONS ON ELECTRON DEVICES, 41(5), 637-642. 10.1109/16.285009

cited authors

  • Chan, Yi-Jen; Pavlidis, D

authors

publication date

  • May 1, 1994

published in

keywords

  • 40 Engineering
  • 4009 Electronics, Sensors and Digital Hardware

Digital Object Identifier (DOI)

publisher

  • Institute of Electrical and Electronics Engineers (IEEE)

start page

  • 637

end page

  • 642

volume

  • 41

issue

  • 5