Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode Article

Li, Guoli, Andre, Nicolas, Chen, Qi et al. (2019). Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode . IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 4001-4007. 10.1109/TED.2019.2930244

Open Access International Collaboration

cited authors

  • Li, Guoli; Andre, Nicolas; Chen, Qi; Wang, Huiru; Francis, Laurent A; Zeng, Yun; Liao, Lei; Flandre, Denis

authors

publication date

  • September 1, 2019

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • Linearity
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SOI
  • Science & Technology
  • Technology
  • low power
  • p-i-n diode
  • sensitivity
  • thermal sensing (temperature sensor)

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 4001

end page

  • 4007

volume

  • 66

issue

  • 9