Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures Article

Kwon, Y, Pavlidis, D, Hein, K et al. (1996). Striped-channel InAlAs/InGaAs HEMT's with shallow-grating structures . IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(12), 2046-2052. 10.1109/16.544373

cited authors

  • Kwon, Y; Pavlidis, D; Hein, K; Brock, T

authors

abstract

  • Striped-channel (SC) InAlAs/InGaAs HEMT's have been demonstrated with shallow gratings. The shallow grating structure keeps the gate from touching the channel layer and thus solves the gate leakage problem observed in the deep grating devices on InP substrates. Various channel widths have been realized to study the impact of the channel width on the dc and microwave performance. Due to the enhanced charge control in the SC HEMT's, enhanced transconductance/source-drain current (Gm/Ids) and transconductance/output conductance (Gm/Gds) were observed. Compared with conventional HEMT's, the SC HEMT's showed degraded fT due to additional parasitic capacitances and improved fmax due to better carrier confinement. © 1996 IEEE.

publication date

  • December 1, 1996

published in

Digital Object Identifier (DOI)

start page

  • 2046

end page

  • 2052

volume

  • 43

issue

  • 12