Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52Al0.48As/InxGal-xAs HEMT’s Article

Ng, GI, Pavlidis, D, Tutt, M et al. (1992). Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In0.52Al0.48As/InxGal-xAs HEMT’s . IEEE TRANSACTIONS ON ELECTRON DEVICES, 39(3), 523-532. 10.1109/16.123473

cited authors

  • Ng, GI; Pavlidis, D; Tutt, M; Marsh, P

authors

abstract

  • Extensive bias-dependent and temperature-dependent low-frequency (LF) noise measurements were performed on lattice-matched and strained In0.52Al0.48As/InxGal-xAs (0.53 < x < 0.70) HEMT’s. The input-noise voltage spectral density is insensitive to VDS bias and shows a minimum at VGS corresponding to the peak gmcondition. The corresponding output-noise voltage spectral density, which depends strongly on the gain of the devices, increases with VDS. The input noise was found to be rather insensitive to indium (In) content. Temperature-dependent low-frequency noise measurements on these devices reveal shallow traps with energies of 0.11, 0.15, and 0.18 eV for the 60%, 65%, and 70% In HEMT’s. Noise transition frequencies for these devices were found to be in the order of 200–300 MHz and remain almost the same for different channel In content and VDS bias. © 1992 IEEE

publication date

  • January 1, 1992

published in

Digital Object Identifier (DOI)

start page

  • 523

end page

  • 532

volume

  • 39

issue

  • 3