Noise characteristics of GaN-based IMPATTs Article

Panda, AK, Pavlidis, D, Alekseev, EA. (2001). Noise characteristics of GaN-based IMPATTs . IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(7), 1473-1475. 10.1109/16.930669

cited authors

  • Panda, AK; Pavlidis, D; Alekseev, EA

authors

abstract

  • Comparison of Wz-phase and Znb-phase GaN IMPATT's with Si was investigated. GaN-based IMPATT's at D-band and potential of noise characteristics of Wz-phase and Znb-phase GaN IMPATT's was also analyzed. The noise of GaN-based IMPATT's was found to be equivalent to Si-based IMPATT's but was higher with respect to GaAs-based IMPATT's. The noise was found to decrease with increasign operating temperature.

publication date

  • July 1, 2001

published in

Digital Object Identifier (DOI)

start page

  • 1473

end page

  • 1475

volume

  • 48

issue

  • 7