Studies of the DC, Low-Frequency, and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMT's Article

Chau, HF, Pavlidis, D, Graffeuil, J. (1989). Studies of the DC, Low-Frequency, and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMT's . IEEE TRANSACTIONS ON ELECTRON DEVICES, 36(10), 2288-2298. 10.1109/16.40913

cited authors

  • Chau, HF; Pavlidis, D; Graffeuil, J

authors

abstract

  • A theoretical and experimental study of sten-doped HEMT’s with light and heavy doped regions is presented. Threshold voltage control and sensitivity with respect to growth parameters and recess etching, and design criteria are investigated for these structures. A three-regime charge control model is used to predict their performance. Using the same semi-analytical theory, which was validated with the help of a self-consistent analysis, both conventional and step-doped HEMT's with an i-layer are compared. 1-μm gate-length n-channel HEMT's with step-doped profile thicknesses of 25, 50, and 100 Å were fabricated and tested at low and high frequencies. The low-frequency noise can be controlled by the step thickness, and a noise analysis is presented. Cutoff frequencies of 16 to 18 GHz and maximum oscillation frequencies of 41 to 59 GHz were measured and correlated to the step thickness. © 1989 IEEE

publication date

  • January 1, 1989

published in

Digital Object Identifier (DOI)

start page

  • 2288

end page

  • 2298

volume

  • 36

issue

  • 10