First observation of bias oscillations in GaN Gunn diodes on GaN substrate Article

Yilmazoglu, O, Mutamba, K, Pavlidis, D et al. (2008). First observation of bias oscillations in GaN Gunn diodes on GaN substrate . IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(6), 1563-1567. 10.1109/TED.2008.921253

cited authors

  • Yilmazoglu, O; Mutamba, K; Pavlidis, D; Karaduman, T

authors

abstract

  • In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on a n+-GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and compared with regard to device stability. A wide negative-differential-resistance (NDR) region was measured for electrical-field values E larger than a threshold field Eth of 150 kV/cm. Electrical fields much higher than the threshold value did not lead to any electromigration effects or discharging problems from the contacts. The drift velocity derived from the current-voltage characteristics, diode geometry, and doping concentration in the active layer was estimated to be 1.9 × 107. Bias oscillations were obtained for the GaN Gunn diodes in the presence of a series inductance. © 2008 IEEE.

publication date

  • June 1, 2008

published in

Digital Object Identifier (DOI)

start page

  • 1563

end page

  • 1567

volume

  • 55

issue

  • 6