Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors Article

Tutt, MN, Pavlidis, D, Khatibzadeh, A et al. (1995). Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors . IEEE TRANSACTIONS ON ELECTRON DEVICES, 42(2), 219-229. 10.1109/16.370076

cited authors

  • Tutt, MN; Pavlidis, D; Khatibzadeh, A; Bayraktaroglu, B

authors

abstract

  • The low frequency noise characteristics of modern self-aligned AIGaAs/GaAs power HBT's have been studied as a function of bias, temperature, frequency, and circuit topology. The devices have a 1/fγ behavior between 10 Hz and 100 Hz with 0.78 ≤γ≤1.65. Strong deviation from 1/γ is measured at higher frequencies due to trapping. The bias dependence of the collector noise ranged from I1.5C-I2.6C, while that for the base noise ranges from I0.7B-I2.5B In all cases the collector noise is greater than the base noise. The base noise is apparently dominated by surface recombination noise and generation-recombination (G-R) noise. The collector noise is due to recombination mechanisms and G-R noise. The activation energy (Ea) of the most significant trap is approximately 0.58 eV. The noise of the devices tested was found to be dominated by material and fabrication related mechanisms and not by fundamental mechanisms. © 1995 IEEE

publication date

  • January 1, 1995

published in

Digital Object Identifier (DOI)

start page

  • 219

end page

  • 229

volume

  • 42

issue

  • 2