Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors Article

Hu, J, Pavlidis, D. (1992). Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors . IEEE TRANSACTIONS ON ELECTRON DEVICES, 39(6), 1273-1281. 10.1109/16.137304

cited authors

  • Hu, J; Pavlidis, D

authors

abstract

  • InAlAs/InGaAs HBT’s with various emitter junction gradings are simulated using a self-consistent Monte Carlo simulator. The effects of the emitter junction grading and the shift of the emitter-base p-n junction into the emitter depletion region due to diffusion of the base dopant are investigated. A minimum transit time (τec) of 1.18 ps is predicted for an In(Ga1-xAlx)As grading with x = 0.6 at the E-B interface and Jc= 0.7 × 10s A/cm2. Graded-base designs do not offer any transit time performance improvement compared with the graded E-B approach. For transient performance, the device switching time is found to remain constant at about 2.2 ps up to x0 ~ 0.7 but increases for larger values. A cutoff frequency (fT) of as high as 270 GHz was observed for x0 = 0.7, indicating that best transport can be achieved from intermediately graded rather than abrupt E-B junction designs. © 1992 IEEE

publication date

  • January 1, 1992

published in

Digital Object Identifier (DOI)

start page

  • 1273

end page

  • 1281

volume

  • 39

issue

  • 6