Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching Article

Hu, J, Tomizawa, K, Pavlidis, D. (1989). Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching . IEEE TRANSACTIONS ON ELECTRON DEVICES, 36(10), 2138-2145. 10.1109/16.40893

cited authors

  • Hu, J; Tomizawa, K; Pavlidis, D

authors

abstract

  • A self-consistent simulation using the Monte Carlo ensemble particle technique for analysis of heterojunction bipolar transistors’ transient behavior, such as switching performance, is presented. The method permits easy evaluation of switching characteristics and is applied to two unusual HBT structures along with a conventional HBT for comparison. The advantages of the special structures over conventional HBT's are understood by investigating effects such as velocity overshoot, valley occupancy, and switching time dependence on current level, collector bias voltage, and peak electric field. © 1989 IEEE

publication date

  • January 1, 1989

published in

Digital Object Identifier (DOI)

start page

  • 2138

end page

  • 2145

volume

  • 36

issue

  • 10