Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures Article

Chan, YJ, Pavlidis, D, Razeghi, M et al. (1990). Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures . IEEE TRANSACTIONS ON ELECTRON DEVICES, 37(10), 2141-2147. 10.1109/16.59902

cited authors

  • Chan, YJ; Pavlidis, D; Razeghi, M; Omnes, F

authors

abstract

  • The dc and microwave characteristics of Ga0.5l–In0.49P/GaAs HEMT’s grown by MOCVD are presented. Devices with 1 nm long gates show transconductance of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer were evaluated at low temperature by the threshold voltage shift and current collapse phenomena. Galn-P/GaAs HEMT’s show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively. © 1990 IEEE

publication date

  • January 1, 1990

published in

Digital Object Identifier (DOI)

start page

  • 2141

end page

  • 2147

volume

  • 37

issue

  • 10