Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures
Article
Chan, YJ, Pavlidis, D, Razeghi, M et al. (1990). Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures
. IEEE TRANSACTIONS ON ELECTRON DEVICES, 37(10), 2141-2147. 10.1109/16.59902
Chan, YJ, Pavlidis, D, Razeghi, M et al. (1990). Ga0.51In0.49P/GaAs HEMT’s Exhibiting Good Electrical Performance at Cryogenic Temperatures
. IEEE TRANSACTIONS ON ELECTRON DEVICES, 37(10), 2141-2147. 10.1109/16.59902