Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs Article

Chau, HF, Hu, J, Pavlidis, D et al. (1992). Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs . IEEE TRANSACTIONS ON ELECTRON DEVICES, 39(12), 2711-2719. 10.1109/16.168753

cited authors

  • Chau, HF; Hu, J; Pavlidis, D; Tomizawa, K

authors

abstract

  • The breakdown-speed tradeoffs of AlGaAs/GaAs HBT's with special collector designs are presented. Monte Carlo techniques and ID drift-diffusion modeling are used for speed and breakdown simulation, respectively. Base current reversal is indicative of breakdown and is used in conjunction with the (breakdown voltage/total transit time) figure of merit in order to set up HBT performance criteria. Conventional (n∼) and inverted field (p∼) collectors show a good speed-breakdown compromise over a limited collector current density. Equally good characteristics but over a broader current range can be obtained from collector launcher (8n+-n”-5p+) HBT's. Undoped collector HBT's (i-5p+) operate finally best at low currents. Overall, the use of special collector structures does not always guarantee best speed-breakdown performance. © 1992 IEEE

publication date

  • January 1, 1992

published in

Digital Object Identifier (DOI)

start page

  • 2711

end page

  • 2719

volume

  • 39

issue

  • 12