Single and Dual p-Doped Channel In0.52A10.48As/InxGa1-xAs (x = 0.53, 0.65) FET’s and the Role of Doping Article

Chan, YJ, Pavlidis, D. (1992). Single and Dual p-Doped Channel In0.52A10.48As/InxGa1-xAs (x = 0.53, 0.65) FET’s and the Role of Doping . IEEE TRANSACTIONS ON ELECTRON DEVICES, 39(3), 466-472. 10.1109/16.123464

cited authors

  • Chan, YJ; Pavlidis, D

authors

abstract

  • The properties of lattice-matched (x = 0.53) and strained (x = 0.65) In0.52A10.48As/InxGa1-xAs p-doped channel FET’s are reported. The role of doping density is studied with the help of two designs (dual-channel with low doping and single-channel with high doping). The strained dual-channel devices demonstrate an improvement of mobility from 108 cm2/V s (53% In) to 265 cm2/V s (65% In) at 300 K. The corresponding intrinsic transconductance enhancement is from 23 mS/mm (53% In) to 46.5 mS/mm (65% In) using 1.0-μm-long gates. The cutoff frequenty (fT) also improves from 1.0 to 1.4 GHz. The impact of strain in the highly doped single-channel device is small. The band structure under lattice-matched and strained conditions and the position of the Fermi level according to doping seem to be the main factors determining the reported features. © 1992 IEEE

publication date

  • January 1, 1992

published in

Digital Object Identifier (DOI)

start page

  • 466

end page

  • 472

volume

  • 39

issue

  • 3