Improved Stability of Fully Recessed Normally-Off GaN MIS-HEMTs With SiNx/AlN Dielectric Stack Article

Li, Yu, Yu, Guohao, Li, Ang et al. (2025). Improved Stability of Fully Recessed Normally-Off GaN MIS-HEMTs With SiNx/AlN Dielectric Stack . IEEE TRANSACTIONS ON ELECTRON DEVICES, 72(9), 4764-4769. 10.1109/TED.2025.3585908

cited authors

  • Li, Yu; Yu, Guohao; Li, Ang; Zhang, Haochen; Yang, An; Sun, Yingfei; Guo, Bohan; Yue, Huixin; Hao, Chunfeng; Lu, Shaoqian; Liu, Bosen; Deng, Xuguang; Cai, Yong; Zeng, Zhongming; Zhang, Baoshun

authors

publication date

  • September 1, 2025

published in

keywords

  • Aluminum nitride
  • CHANNEL
  • Dielectric stack
  • Dielectrics
  • ENHANCEMENT
  • Engineering
  • Engineering, Electrical & Electronic
  • FETS
  • GATE
  • Gallium nitride
  • HEMTs
  • III-V semiconductor materials
  • INSTABILITY
  • LAYER
  • Leakage currents
  • Logic gates
  • MODFETs
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SURFACE PASSIVATION
  • Science & Technology
  • Stress
  • Technology
  • Thermal stability
  • enhancement-mode gallium nitride (GaN) metal-insulator-semiconductor high electron mobility transistors (E-mode MIS-HEMTs)
  • gate stability
  • in situ N-2 plasma pretreatment

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 4764

end page

  • 4769

volume

  • 72

issue

  • 9