Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In0.7Ga0.3As/InA1As HEMT's Article

Kwon, Y, Pavlidis, D, Brock, TL et al. (1995). Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InA1As/In0.7Ga0.3As/InA1As HEMT's . IEEE TRANSACTIONS ON ELECTRON DEVICES, 42(6), 1017-1025. 10.1109/16.387231

cited authors

  • Kwon, Y; Pavlidis, D; Brock, TL; Streit, DC

authors

abstract

  • Pseudomorphic double heterojunction (DH) lnAlAs/Ino.7Gao.3As/InAlAs HEMT's with very high cut-off frequencies and current densities have been demonstrated. DC and microwave characteristics of the double heterojunction and single heterojunction (SH) HEMT's have been compared. Two identical layers except for the dopings have been grown and fabricated using a conventional non-self-aligned process for this purpose. In order to further enhance the performance level of DH-HEMT’s, a sub-O.l µm offset Γ -gate self-aligned process has been used on DH layers. A maximum frequency of oscillation (fmax) of 350 GHz and a current gain cut-off frequency (f T) of 180 GHz have been achieved in this way along with the full channel current of 1.2 A/mm. Theoretical simulation using 2-D ensemble Monte Carlo simulation has also been performed to optimize the DH layer structure and to study the transport characteristics of DH-HEMT‘s compared with SH counterparts. © 1995 IEEE

publication date

  • January 1, 1995

published in

Digital Object Identifier (DOI)

start page

  • 1017

end page

  • 1025

volume

  • 42

issue

  • 6