Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2001). Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors . IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(3), 530-534. 10.1109/16.906447

Industry Collaboration International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Borovitskaya, E; Dmitriev, AP; Levinshtein, ME; Gaska, R; Khan, MA; Yang, JW; Hu, XH; Simin, G

authors

publication date

  • March 1, 2001

webpage

published in

keywords

  • 1/f noise
  • BAND ILLUMINATION
  • CHANNEL
  • DEVICES
  • Engineering
  • Engineering, Electrical & Electronic
  • FLICKER NOISE
  • GAAS
  • HEMTS
  • HFETs
  • LOW 1/F NOISE
  • LOW-FREQUENCY NOISE
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SEMICONDUCTORS
  • SPECTROSCOPY
  • Science & Technology
  • Technology
  • gallium nitride
  • generation recombination noise
  • low frequency noise

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 530

end page

  • 534

volume

  • 48

issue

  • 3