Transport Equation Approach For Heterojunction Bipolar Transistors Article

Tomizawa, K, Pavlidis, D. (1990). Transport Equation Approach For Heterojunction Bipolar Transistors . IEEE TRANSACTIONS ON ELECTRON DEVICES, 37(3), 519-529. 10.1109/16.47753

cited authors

  • Tomizawa, K; Pavlidis, D

authors

abstract

  • Transport equations for particle, momentum, and energy densities in two conduction bands are applied to a self-consistent numerical simulation of heterojunction bipolar transistors. Simple formulas for the relaxation frequencies are proposed, by which the variation of the conduction band energy and doping concentration in a heterostructure device are easily taken into account. The electron transport in the AlGaAs/GaAs heterojunction bipolar transistor with two different collector structures is analyzed and discussed. © 1990 IEEE

publication date

  • January 1, 1990

published in

Digital Object Identifier (DOI)

start page

  • 519

end page

  • 529

volume

  • 37

issue

  • 3