Radiation Degradation and Mitigation of an Ultrathin SOI SPAD Using a Perimeter Gate Article

Klauner, Tom, Roisin, Nicolas, Bonfanti, Ottilie et al. (2025). Radiation Degradation and Mitigation of an Ultrathin SOI SPAD Using a Perimeter Gate . IEEE TRANSACTIONS ON ELECTRON DEVICES, 72(4), 1844-1850. 10.1109/TED.2025.3543789

Open Access International Collaboration

cited authors

  • Klauner, Tom; Roisin, Nicolas; Bonfanti, Ottilie; Alirezaei, Iman Sabri; Andre, Nicolas; Flandre, Denis

authors

publication date

  • April 1, 2025

published in

keywords

  • Breakdown
  • Degradation
  • Electric breakdown
  • Electric fields
  • Engineering
  • Engineering, Electrical & Electronic
  • PHOTON AVALANCHE-DIODE
  • Performance evaluation
  • Physical Sciences
  • Physics
  • Physics, Applied
  • RECOMBINATION MODEL
  • Radiation effects
  • Science & Technology
  • Semiconductor device measurement
  • Silicon
  • Silicon-on-insulator
  • Single-photon avalanche diodes
  • TCAD
  • Technology
  • Voltage measurement
  • dark count rate (DCR)
  • mitigation technique
  • rad-hard
  • single-photon avalanche diode (SPAD)

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 1844

end page

  • 1850

volume

  • 72

issue

  • 4