Investigation of the impact of Al mole-fraction on the consequences of RF stress on Alx Ga1-x N/GaN MODFETs Article

Valizadeh, P, Pavlidis, D. (2005). Investigation of the impact of Al mole-fraction on the consequences of RF stress on Alx Ga1-x N/GaN MODFETs . IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9), 1933-1939. 10.1109/TED.2005.852543

cited authors

  • Valizadeh, P; Pavlidis, D

authors

abstract

  • Variations of the low-frequency noise (LFN), power, and dc characteristics of a variety of SiNx passivated AIGaN/GaN MODFETs with different values of Al mole-fraction, gate length, and gate drain spacing upon RF stress are investigated. It is experimentally evidenced that the variation of Al mole-fraction (x) of the barrier Alx Ga1-xN layer from 0.2 to 0.4, has no considerable impact on the drain and gate low-frequency noise current characteristics. The most noticeable variation on the device characteristics upon long-term RF stressing has been on the pinch-off voltage. Although no material degradation by increasing the Al mole-fraction has been evidenced through the low-frequency noise data, it is observed that the variation of pinch-off voltage upon RF stressing becomes more important as the Al mole-fraction increases. © 2005 IEEE.

publication date

  • September 1, 2005

published in

Digital Object Identifier (DOI)

start page

  • 1933

end page

  • 1939

volume

  • 52

issue

  • 9